SMBJ33A Suppressors Datasheet

SMBJ33A Datasheet PDF, Equivalent


Part Number

SMBJ33A

Description

Transient Voltage Suppressors

Manufacture

Vishay

Total Page 5 Pages
Datasheet
Download SMBJ33A Datasheet


SMBJ33A
www.vishay.com
SMBJ5.0A thru SMBJ188A
Vishay General Semiconductor
Surface Mount TRANSZORB®
Transient Voltage Suppressors
SMB (DO-214AA)
PRIMARY CHARACTERISTICS
VBR (bi-directional)
6.4 V to 231 V
VBR (uni-directional)
VWM
PPPM
6.4 V to 231 V
5.0 V to 188 V
600 W
IFSM (uni-directional only)
100 A
TJ max.
Polarity
150 °C
Uni-directional, bi-directional
Package
SMB (DO-214AA)
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle): 0.01 %
Available
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: for uni-directional types the band denotes cathode
end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)
Peak pulse current with a 10/1000 μs waveform (1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
SYMBOL
PPPM
IPPM
IFSM
TJ, TSTG
VALUE
600
See next table
100
-55 to +150
UNIT
W
A
A
°C
Revision: 24-Jan-2019
1 Document Number: 88392
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SMBJ33A
www.vishay.com
SMBJ5.0A thru SMBJ188A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
(+)SMBJ5.0A (5)
DEVICE MARKING
CODE
UNI BI
KE KE
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
MIN. MAX.
6.40 7.07
TEST
CURRENT
IT
(mA)
10
STAND-OFF
VOLTAGE
VWM
(V)
5.0
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA) (3)
800
(+)SMBJ6.0A
KG KG 6.67 7.37
10
6.0
800
(+)SMBJ6.5A
KK AK 7.22 7.98
10
6.5
500
(+)SMBJ7.0A
KM KM 7.78 8.60
10
7.0
200
(+)SMBJ7.5A
KP AP 8.33 9.21
1.0
7.5
100
(+)SMBJ8.0A
KR AR 8.89 9.83
1.0
8.0
50
(+)SMBJ8.5A
KT AT 9.44 10.4
1.0
8.5
20
(+)SMBJ9.0A
KV AV 10.0 11.1
1.0
9.0
10
(+)SMBJ10A
KX AX 11.1 12.3
1.0
10
5.0
(+)SMBJ11A
KZ KZ 12.2 13.5
1.0
11
5.0
(+)SMBJ12A
LE BE 13.3 14.7
1.0
12
5.0
(+)SMBJ13A
LG LG 14.4 15.9
1.0
13
1.0
(+)SMBJ14A
LK BK 15.6 17.2
1.0
14
1.0
(+)SMBJ15A
LM BM 16.7 18.5
1.0
15
1.0
(+)SMBJ16A
LP LM 17.8 19.7
1.0
16
1.0
(+)SMBJ17A
LR LR 18.9 20.9
1.0
17
1.0
(+)SMBJ18A
LT BT 20.0 22.1
1.0
18
1.0
(+)SMBJ20A
LV LV 22.2 24.5
1.0
20
1.0
(+)SMBJ22A
LX BX 24.4 26.9
1.0
22
1.0
(+)SMBJ24A
LZ BZ 26.7 29.5
1.0
24
1.0
(+)SMBJ26A
ME CE 28.9 31.9
1.0
26
1.0
(+)SMBJ28A
MG MG 31.1 34.4
1.0
28
1.0
(+)SMBJ30A
MK CK 33.3 36.8
1.0
30
1.0
(+)SMBJ33A
MM CM 36.7 40.6
1.0
33
1.0
(+)SMBJ36A
MP CP 40.0 44.2
1.0
36
1.0
(+)SMBJ40A
MR CR 44.4 49.1
1.0
40
1.0
(+)SMBJ43A
MT CT 47.8 52.8
1.0
43
1.0
(+)SMBJ45A
MV MV 50.0 55.3
1.0
45
1.0
(+)SMBJ48A
MX MX 53.3 58.9
1.0
48
1.0
(+)SMBJ51A
MZ MZ 56.7 62.7
1.0
51
1.0
(+)SMBJ54A
NE NE 60.0 66.3
1.0
54
1.0
(+)SMBJ58A
NG NG 64.4 71.2
1.0
58
1.0
(+)SMBJ60A
NK NK 66.7 73.7
1.0
60
1.0
(+)SMBJ64A
NM NM 71.1 78.6
1.0
64
1.0
(+)SMBJ70A
NP NP 77.8 86.0
1.0
70
1.0
(+)SMBJ75A
NR NR 83.3 92.1
1.0
75
1.0
(+)SMBJ78A
NT NT 86.7 95.8
1.0
78
1.0
(+)SMBJ85A
NV NV 94.4 104
1.0
85
1.0
(+)SMBJ90A
NX NX 100 111
1.0
90
1.0
(+)SMBJ100A
NZ NZ 111 123
1.0
100
1.0
(+)SMBJ110A
PE PE 122 135
1.0
110
1.0
(+)SMBJ120A
PG PG 133 147
1.0
120
1.0
(+)SMBJ130A
PK PK 144 159
1.0
130
1.0
(+)SMBJ150A
PM PM 167 185
1.0
150
1.0
(+)SMBJ160A
PP PP 178 197
1.0
160
1.0
(+)SMBJ170A
PR PR 189 209
1.0
170
1.0
SMBJ188A
PS PS 209 231
1.0
188
1.0
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM (A) (2)
65.2
58.3
53.6
50.0
46.5
44.1
41.7
39.0
35.3
33.0
30.2
27.9
25.9
24.6
23.1
21.7
20.5
18.5
16.9
15.4
14.3
13.2
12.4
11.3
10.3
9.3
8.6
8.3
7.8
7.3
6.9
6.4
6.2
5.8
5.3
5.0
4.8
4.4
4.1
3.7
3.4
3.1
2.9
2.5
2.3
2.2
2.0
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
VC (V)
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
113
121
126
137
146
162
177
193
209
243
259
275
328
Notes
(1) Pulse test: tp 50 ms
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) For bi-directional types having VWM of 10 V and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMBJ5.0CA, the maximum VBR is 7.25 V
(6) VF = 3.5 V max. at IF = 50 A (uni-directional only)
(+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
Revision: 24-Jan-2019
2 Document Number: 88392
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com SMBJ5.0A thru SMBJ188A V ishay General Semiconductor Surface Mo unt TRANSZORB® Transient Voltage Suppr essors SMB (DO-214AA) PRIMARY CHARACT ERISTICS VBR (bi-directional) 6.4 V t o 231 V VBR (uni-directional) VWM PPPM 6.4 V to 231 V 5.0 V to 188 V 600 W IFSM (uni-directional only) 100 A TJ max. Polarity 150 °C Uni-directional, bi-directional Package SMB (DO-214AA ) DEVICES FOR BI-DIRECTION APPLICATION S For bi-directional devices use CA suf fix (e.g. SMBJ10CA). Electrical char acteristics apply in both directions. FEATURES • Low profile package • Ideal for automated placement • Glas s passivated chip junction • Availabl e in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % Available • Excellent clamping capability • Very fast response time • Low increme ntal surge resistance • Meets MSL lev el 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Autom.
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