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EDI8465C

Part Number	EDI8465C
Manufacturer	EDI
Description	High Speed 256K Monolithic SRAM
Published	Dec 9, 2019
Detailed Description	~EDI 64Kx4 Static RAM CMOS, High Speed Monolithic EDI8465CIP35145155 High Speed 256K Monolithic SRAM Features The EDI8...
Datasheet	EDI8465C PDF File

Overview

~EDI 64Kx4 Static RAM CMOS, High Speed Monolithic EDI8465CIP35145155 High Speed 256K Monolithic SRAM Features The EDI8465C/P is a high performance CMOS Static RAM organized as 64Kx4 and available in both standard power (C) and low power (P) versions.
Inputs and outputs are TTL compatible and allow for direct interfacing with common system bus architecture.
The EDI8465C/P is packaged in a300 mil wide, 24 pin DIP, which provides excellent board level packing densities.
Military product is available 100% screened to MILSTD-883C, Class B.
64Kx4 bit CMOS Static Random Access Memory • Access Times 35, 45, and 55ns • Fully Static, No Clocks • Data Retention Function on EDI8465P • Battery Back-up Capability • TTL Compatilbe I/O Jedec Approved Pinout • 24 Pin Ceramic DIP, 300 mils wide (0) • Common Data Inputs and Outputs Single +5V (±10%) Supply Operation Pin Configuration and Block Diagram A0 1 A1 2 A2 3 A3 4 A4 5 A5 6 A6 7 A7 8 A8 9 A910 E11 VSS 12 24 vee 23 A15 22 A14 21 A13 20 A12 19 A11 18 A10 17 D03 16 D02 15 D01 14 D00 13 W ROW DECOOE AS AS AA KJ A2 A.
A•• A.
4 MEMORY ARRAY 8 BLOCKS 256 ROWS 32 COLUMNS 4 BITS WIDE Pin Names A0-A15 E IN OQ0-0Q3 vcc VSS Address Inputs Chip Enable Write Enable Common Oata InputlOutput Power (+5V±10%) Ground (1) ED18465C1P35I45I55 Rev.
1.
0 1189 57 Absolute Maximum Ratings* Recommended DC Operating Conditions Voltage on any pin relative to VSS .
.
-0.
5V to 7.
0V Operating Temperature TA (Ambient) Industrial.
.
-40cC to +S5cC Military.
.
-55cCto +125cC Storage Temperature (Ambient/Ceramic).
-65cC to +150cC Power Dissipation.
.
.
1Watt Output CUrrent.
.
.
20 rnA 'StleSS greater than those isted under 'Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating on~ and functional operation of the device at these or any...

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