Efficiency Thyristor. CLA30MT1200NPB Datasheet

CLA30MT1200NPB Thyristor. Datasheet pdf. Equivalent

CLA30MT1200NPB Datasheet
Recommendation CLA30MT1200NPB Datasheet
Part CLA30MT1200NPB
Description High Efficiency Thyristor
Feature CLA30MT1200NPB; High Efficiency Thyristor Three Quadrants operation: QI - QIII 1~ Triac Part number CLA30MT1200NPB .
Manufacture IXYS
Datasheet
Download CLA30MT1200NPB Datasheet





IXYS CLA30MT1200NPB
High Efficiency Thyristor
Three Quadrants operation: QI - QIII
1~ Triac
Part number
CLA30MT1200NPB
CLA30MT1200NPB
VRRM = 1200 V
I TAV
=
15 A
VT = 1.35 V
Three Quadrants Operation
Positive Half Cycle
T2
+
T2
(-) IGT
IGT -
(+) IGT
T1
REF QII QI
T2 QIII QIV
T1
REF
+ IGT
(-) IGT
T1
REF
-
Negative Half Cycle
Note: All Polarities are referenced to T1
Features / Advantages:
Triac for line frequency
Three Quadrants Operation
- QI - QIII
Planar passivated chip
Long-term stability
of blocking currents and voltages
4
3
1
Backside: anode/cathode
Applications:
Line rectifying 50/60 Hz
Softstart AC motor control
DC Motor control
Power converter
AC power control
Lighting and temperature control
Package: TO-220
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
High creepage distance
between terminals
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200121c



IXYS CLA30MT1200NPB
CLA30MT1200NPB
Rectifier
Ratings
Symbol
VRSM/DSM
VRRM/DRM
I R/D
VT
I TAV
I RMS
VT0
rT
R thJC
RthCH
Ptot
I TSM
I²t
CJ
PGM
PGAV
(di/dt)cr
(dv/dt)cr
VGT
IGT
VGD
IGD
IL
IH
t gd
tq
Definition
Conditions
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
VR/D = 1200 V
VR/D = 1200 V
forward voltage drop
IT = 15 A
I T = 30 A
IT = 15 A
I T = 30 A
average forward current
TC = 120°C
RMS forward current per phase
180° sine
threshold voltage
slope resistance
for power loss calculation only
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
min.
TVJ = 125 °C
TVJ = 150°C
TVJ = 150°C
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
value for fusing
junction capacitance
max. gate power dissipation
average gate power dissipation
critical rate of rise of current
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
turn-off time
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V
tP = 30 µs
tP = 300 µs
f = 1 MHz
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
TC = 150°C
TVJ = 150 °C; f = 50 Hz
repetitive, IT = 45 A
tP = 200 µs; diG /dt = 0.3 A/µs;
IG = 0.3 A; V = VDRM
non-repet., IT = 15 A
V = VDRM
TVJ = 150°C
R GK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = VDRM
TVJ = 150°C
t p = 10 µs
TVJ = 25 °C
IG = 0.3 A; diG/dt = 0.3 A/µs
VD = 6 V RGK =
TVJ = 25 °C
VD = ½ VDRM
TVJ = 25 °C
IG = 0.3 A; diG/dt = 0.3 A/µs
VR = 100 V; IT = 15A; V = VDRM TVJ =125 °C
di/dt = 10 A/µs dv/dt = 20 V/µs tp = 200 µs
typ. max. Unit
1300 V
1200 V
10 µA
1.5 mA
1.35 V
1.68 V
1.35 V
1.79 V
15 A
33 A
0.89 V
30 m
0.95 K/W
0.5
K/W
130 W
170 A
185 A
145 A
155 A
145 A²s
140 A²s
105 A²s
100 A²s
9
pF
5W
1W
0.2 W
150 A/µs
500 A/µs
500 V/µs
1.3 V
1.6 V
± 40 mA
± 60 mA
0.2 V
± 1 mA
70 mA
50 mA
2 µs
150
µs
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200121c



IXYS CLA30MT1200NPB
Package TO-220
Symbol
I RMS
TVJ
Top
Tstg
Weight
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
MD
mounting torque
F
C
mounting force with clip
Product Marking
Part Number
Logo
Date Code
Lot #
Location
XXXXXX
yywwZ
123456
Conditions
per terminal
CLA30MT1200NPB
Ratings
min. typ. max. Unit
35 A
-40
150 °C
-40
125 °C
-40
150 °C
2
g
0.4
0.6 Nm
20
60 N
Part description
C = Thyristor (SCR)
L = High Efficiency Thyristor
A = (up to 1200V)
30 = Current Rating [A]
MT = 1~ Triac
1200 = Reverse Voltage [V]
N = Three Quadrants operation: QI - QIII
PB = TO-220AB (3)
Ordering
Standard
Ordering Number
CLA30MT1200NPB
Marking on Product
CLA30MT1200NPB
Delivery Mode
Tube
Quantity Code No.
50
517031
Similar Part
CLA30MT1200NPZ
Package
TO-263AB (D2Pak) (2HV)
Voltage class
1200
Equivalent Circuits for Simulation
I V0
R0
Thyristor
V 0 max
R0 max
threshold voltage
slope resistance *
0.89
27
* on die level
T VJ = 150°C
V
m
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200121c





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