TPWR8004PL MOSFET Datasheet

TPWR8004PL Datasheet, PDF, Equivalent


Part Number

TPWR8004PL

Description

Silicon N-channel MOSFET

Manufacture

Toshiba

Total Page 10 Pages
Datasheet
Download TPWR8004PL Datasheet


TPWR8004PL
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPWR8004PL
1. Applications
• High-Efficiency DC-DC Converters
• Switching Voltage Regulators
• Motor Drivers
2. Features
(1) High-speed switching
(2) Small gate charge: QSW = 23 nC (typ.)
(3) Small output charge: Qoss = 85.4 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 0.65 m(typ.) (VGS = 10 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
(6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
TPWR8004PL
DSOP Advance
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
©2015-2019
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2014-09
2019-10-21
Rev.5.0

TPWR8004PL
TPWR8004PL
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 40 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Tc = 25 ) (Note 1), (Note 2)
(Bottom drain)
ID
150 A
Drain current (DC)
Drain current (pulsed)
(Silicon limit)
(t = 100 µs)
(Note 1), (Note 2)
(Note 1)
ID
IDP
340 A
500 A
Power dissipation
(Tc = 25 )
(Bottom drain)
PD 170 W
Power dissipation
Power dissipation
Single-pulse avalanche energy
(Note 3)
(Note 4)
(Note 5)
PD
PD
EAS
3.0 W
1.0 W
336 mJ
Single-pulse avalanche current
Channel temperature
Storage temperature
(Note 5)
IAS
Tch
Tstg
120
175
-55 to 175
A
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Symbol
Channel-to-case thermal resistance
Bottom drain
(Tc = 25 )
Rth(ch-c)
Channel-to-case thermal resistance
Top source
(Tc = 25 )
Rth(ch-c)
Channel-to-ambient thermal resistance
(Ta = 25 )
(Note 3)
Rth(ch-a)
Channel-to-ambient thermal resistance
(Ta = 25 )
(Note 4)
Rth(ch-a)
Note 1: Ensure that the channel temperature does not exceed 175 .
Note 2: Limited by package limit. Silicon chip capability is 340 A. (Tc = 25 )(Bottom drain)
Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 5: VDD = 32 V, Tch = 25 (initial), L = 18 µH, IAS = 120 A
Max Unit
0.88 /W
0.93 /W
50 /W
142 /W
Fig. 5.1 Device Mounted on a Glass-Epoxy
Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
©2015-2019
Toshiba Electronic Devices & Storage Corporation
2
2019-10-21
Rev.5.0


Features MOSFETs Silicon N-channel MOS (U-MOS- H) TPWR8004PL 1. Applications • High- Efficiency DC-DC Converters • Switchi ng Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching ( 2) Small gate charge: QSW = 23 nC (typ. ) (3) Small output charge: Qoss = 85.4 nC (typ.) (4) Low drain-source on-resis tance: RDS(ON) = 0.65 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancem ent mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Intern al Circuit TPWR8004PL DSOP Advance 1 , 2, 3: Source 4: Gate 5, 6, 7, 8: Drai n ©2015-2019 Toshiba Electronic Devic es & Storage Corporation 1 Start of c ommercial production 2014-09 2019-10-21 Rev.5.0 TPWR8004PL 4. Absolute Maxim um Ratings (Note) (Ta = 25  unless o therwise specified) Characteristics S ymbol Rating Unit Drain-source volta ge VDSS 40 V Gate-source voltage VGS S ±20 Drain current (DC) (Tc = 25 ) (Note 1), (Note 2) (Bottom drain) ID 150 A Drain current (DC) Drain curre.
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