IRFS7734-7PPbF MOSFET Datasheet

IRFS7734-7PPbF Datasheet, PDF, Equivalent


Part Number

IRFS7734-7PPbF

Description

Power MOSFET

Manufacture

International Rectifier

Total Page 11 Pages
Datasheet
Download IRFS7734-7PPbF Datasheet


IRFS7734-7PPbF
Application
 Brushed Motor drive applications
 BLDC Motor drive applications
 Battery powered circuits
 Half-bridge and full-bridge topologies
 Synchronous rectifier applications
 Resonant mode power supplies
 OR-ing and redundant power switches
StrongIRFET™
IRFS7734-7PPbF
HEXFET® Power MOSFET
 D
VDSS
75V
RDS(on) typ.
2.6m
G
max
3.05m
S ID
197A
Benefits
 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
 Fully Characterized Capacitance and Avalanche SOA
 Enhanced body diode dV/dt and dI/dt Capability
 Lead-Free, RoHS Compliant
G
Gate
D
Drain
S
Source
Base Part Number
IRFS7734-7PPbF
Package Type
D2Pak-7PIN
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Complete Part Number
IRFS7734-7PPbF
IRFS7734TRL7PP
12
10
8
6
4
2
0
4
ID = 100A
TJ = 125°C
TJ = 25°C
8 12 16
VGS, Gate-to-Source Voltage (V)
20
Fig 1. Typical On-Resistance vs. Gate Voltage
200
150
100
50
0
25
50 75 100 125 150
TC , CaseTemperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
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April 7, 2015

IRFS7734-7PPbF
  IRFS7734-7PPbF
Absolute Maximium Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics 
EAS (Thermally limited) Single Pulse Avalanche Energy 
EAS (Thermally limited) Single Pulse Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case 
RJA Junction-to-Ambient 
Max.
197
139
600
294
2.0
± 20
-55 to + 175  
300
350
670
See Fig 14, 15, 23a, 23b
Typ.
–––
–––
Max.
0.51
40
 
Units
A
W
W/°C
V
°C  
mJ
A
mJ
Units
°C/W 
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Gate Resistance
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ.
–––
53
2.6
3.1
–––
–––
–––
–––
–––
2.0
Max.
–––
–––
3.05
–––
3.7
1.0
150
100
-100
–––
Units
V
mV/°C
m
m
V
µA
nA

Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 100A
VGS = 6.0V, ID = 50A
VDS = VGS, ID = 250µA
VDS = 75 V, VGS = 0V
VDS = 75V,VGS = 0V,TJ =125°C
VGS = 20V
VGS = -20V
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.07mH, RG = 50, IAS = 100A, VGS =10V.
ISD 100A, di/dt 1314A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C..
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 37A, VGS =10V.
2 www.irf.com © 2015 International Rectifier
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April 7, 2015


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