Power MOSFET. IRFS7734-7PPbF Datasheet

IRFS7734-7PPbF MOSFET. Datasheet pdf. Equivalent

IRFS7734-7PPbF Datasheet
Recommendation IRFS7734-7PPbF Datasheet
Part IRFS7734-7PPbF
Description Power MOSFET
Feature IRFS7734-7PPbF; .
Manufacture International Rectifier
Datasheet
Download IRFS7734-7PPbF Datasheet




International Rectifier IRFS7734-7PPbF
Application
 Brushed Motor drive applications
 BLDC Motor drive applications
 Battery powered circuits
 Half-bridge and full-bridge topologies
 Synchronous rectifier applications
 Resonant mode power supplies
 OR-ing and redundant power switches
StrongIRFET™
IRFS7734-7PPbF
HEXFET® Power MOSFET
 D
VDSS
75V
RDS(on) typ.
2.6m
G
max
3.05m
S ID
197A
Benefits
 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
 Fully Characterized Capacitance and Avalanche SOA
 Enhanced body diode dV/dt and dI/dt Capability
 Lead-Free, RoHS Compliant
G
Gate
D
Drain
S
Source
Base Part Number
IRFS7734-7PPbF
Package Type
D2Pak-7PIN
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Complete Part Number
IRFS7734-7PPbF
IRFS7734TRL7PP
12
10
8
6
4
2
0
4
ID = 100A
TJ = 125°C
TJ = 25°C
8 12 16
VGS, Gate-to-Source Voltage (V)
20
Fig 1. Typical On-Resistance vs. Gate Voltage
200
150
100
50
0
25
50 75 100 125 150
TC , CaseTemperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
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International Rectifier IRFS7734-7PPbF
  IRFS7734-7PPbF
Absolute Maximium Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics 
EAS (Thermally limited) Single Pulse Avalanche Energy 
EAS (Thermally limited) Single Pulse Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case 
RJA Junction-to-Ambient 
Max.
197
139
600
294
2.0
± 20
-55 to + 175  
300
350
670
See Fig 14, 15, 23a, 23b
Typ.
–––
–––
Max.
0.51
40
 
Units
A
W
W/°C
V
°C  
mJ
A
mJ
Units
°C/W 
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Gate Resistance
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ.
–––
53
2.6
3.1
–––
–––
–––
–––
–––
2.0
Max.
–––
–––
3.05
–––
3.7
1.0
150
100
-100
–––
Units
V
mV/°C
m
m
V
µA
nA

Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 100A
VGS = 6.0V, ID = 50A
VDS = VGS, ID = 250µA
VDS = 75 V, VGS = 0V
VDS = 75V,VGS = 0V,TJ =125°C
VGS = 20V
VGS = -20V
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.07mH, RG = 50, IAS = 100A, VGS =10V.
ISD 100A, di/dt 1314A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C..
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 37A, VGS =10V.
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International Rectifier IRFS7734-7PPbF
  IRFS7734-7PPbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff.(ER)
Coss eff.(TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Output Capacitance (Time Related)
Min. Typ. Max. Units
Conditions
182 ––– –––
––– 180 270
S VDS = 10V, ID =100A
ID = 100A
–––
–––
45
54
–––
–––
nC
 VVDGSS
=
=
38V
10V
––– 126 –––
––– 17 –––
VDD = 38V
–––
–––
85
123
–––
–––
ns
ID = 100A
RG= 2.7
––– 75 –––
VGS = 10V
––– 10130 –––
––– 820 –––
VGS = 0V
VDS = 25V
––– 506 ––– pF   ƒ = 1.0MHz
––– 715 –––
VGS = 0V, VDS = 0V to 60V
––– 935 –––
VGS = 0V, VDS = 0V to 60V
Diode Characteristics  
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
–––
–––
Typ.
–––
–––
Max. Units
Conditions
197
600
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
G
D
S
VSD
dv/dt
trr
Qrr
IRRM
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
––– ––– 1.2 V TJ = 25°C,IS = 100A,VGS = 0V 
––– 4.8 ––– V/ns TJ = 175°C,IS =100A,VDS = 75V
–––
–––
46
51
–––
–––
ns
TJ = 25°C
TJ = 125°C
VDD = 64V
IF = 100A,
–––
–––
73
95
–––
–––
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/µs 
 
––– 2.7 ––– A TJ = 25°C
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