IRFSL7762PbF MOSFET Datasheet

IRFSL7762PbF Datasheet, PDF, Equivalent


Part Number

IRFSL7762PbF

Description

Power MOSFET

Manufacture

International Rectifier

Total Page 12 Pages
Datasheet
Download IRFSL7762PbF Datasheet


IRFSL7762PbF
Application
 Brushed motor drive applications
 BLDC motor drive applications
 Battery powered circuits
 Half-bridge and full-bridge topologies
 Synchronous rectifier applications
 Resonant mode power supplies
 OR-ing and redundant power switches
 DC/DC and AC/DC converters
 DC/AC inverters
Benefits
 Improved gate, avalanche and dynamic dV/dt ruggedness
 Fully characterized capacitance and avalanche SOA
 Enhanced body diode dV/dt and dI/dt capability
 Lead-free, RoHS compliant
StrongIRFET™
IRFS7762PbF
IRFSL7762PbF
HEXFET® Power MOSFET
  D VDSS
75V
RDS(on) typ.
5.6m
G
max
6.7m
S ID
85A
DD
S
G
D2Pak
IRFS7762PbF
S
GD
TO-262
IRFSL7762PbF
G
Gate
D
Drain
S
Source
Base part number
IRFSL7762PbF
IRFS7762PbF
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
Tube
Tape and Reel Left
50
50
800
Orderable Part Number
IRFSL7762PbF
IRFS7762PbF
IRFS7762TRLPbF
18
ID = 51A
16
14
12 TJ = 125°C
10
8
TJ = 25°C
6
4
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
100
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
1 www.irf.com © 2015 International Rectifier
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February 19, 2015

IRFSL7762PbF
  IRFS/SL7762PbF
Absolute Maximum Rating
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current 
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics 
Symbol
Parameter
EAS (Thermally limited) Single Pulse Avalanche Energy 
EAS (Thermally limited) Single Pulse Avalanche Energy 
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case 
RJA Junction-to-Ambient (PCB Mount)
Max.
85
60
335
140
0.95
± 20
-55 to + 175  
300
Max.
160
243
See Fig 15, 16, 23a, 23b
Typ.
–––
–––
Max.
1.05
40
Units
A
W
W/°C
V
°C  
Units
mJ  
A
mJ
Units
°C/W  
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
IGSS
RG
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ.
–––
58
5.6
6.6
–––
–––
–––
–––
–––
2.5
Max.
–––
–––
6.7
–––
3.7
1.0
150
100
-100
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
m
VGS = 10V, ID = 51A
VGS = 6.0V, ID = 26A
V VDS = VGS, ID = 100µA
µA
VDS = 75V, VGS = 0V
VDS = 75V,VGS = 0V,TJ = 125°C
nA
VGS = 20V
VGS = -20V

Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 120µH, RG = 50, IAS = 51A, VGS =10V.
ISD 51A, di/dt 735A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 22A, VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
2 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
February 19, 2015


Features Application  Brushed motor drive a pplications  BLDC motor drive app lications  Battery powered circui ts  Half-bridge and full-bridge t opologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant p ower switches  DC/DC and AC/DC co nverters  DC/AC inverters Benefit s  Improved gate, avalanche and d ynamic dV/dt ruggedness  Fully ch aracterized capacitance and avalanche S OA  Enhanced body diode dV/dt and dI/dt capability  Lead-free, RoH S compliant StrongIRFET™ IRFS7762PbF IRFSL7762PbF HEXFET® Power MOSFET D VDSS 75V RDS(on) typ. 5.6m G max 6.7m S ID 85A DD S G D2Pak IRFS7762PbF S GD TO-262 IRFSL7 762PbF G Gate D Drain S Source Base part number IRFSL7762PbF IRFS7762PbF Package Type TO-262 D2-Pak Standard Pa ck Form Quantity Tube Tube Tape and Reel Left 50 50 800 Orderable Part Nu mber IRFSL7762PbF IRFS7762PbF IRFS7762TRLPbF RDS(on), Drain-to -Source On Resistance (m ) ID, Drain Current (A) 18 ID = 51A .
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