Power MOSFET. SiHF7N60E Datasheet

SiHF7N60E MOSFET. Datasheet pdf. Equivalent

SiHF7N60E Datasheet
Recommendation SiHF7N60E Datasheet
Part SiHF7N60E
Description Power MOSFET
Feature SiHF7N60E; www.vishay.com SiHF7N60E Vishay Siliconix E Series Power MOSFET TO-220 FULLPAK D G GDS S N-Ch.
Manufacture Vishay
Datasheet
Download SiHF7N60E Datasheet





Vishay SiHF7N60E
www.vishay.com
SiHF7N60E
Vishay Siliconix
E Series Power MOSFET
TO-220 FULLPAK
D
G
GDS
S
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. () at 25 °C
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
40
5
9
Single
0.6
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
Available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
TO-220 FULLPAK
SiHF7N60E-E3
SiHF7N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
TC = -25 °C, ID = 250 μA
Continuous Drain Current (TJ = 150 °C) e
Pulsed Drain Current a
VGS at 10 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt d
TJ = 125 °C
Soldering Recommendations (Peak temperature) c
For 10 s
Mounting Torque
M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 13.8 mH, Rg = 25 , IAS = 2.5 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
e. Limited by maximum junction temperature.
VDS
VGS
ID
IDM
EAS
PD
TJ, Tstg
dV/dt
LIMIT
600
575
± 30
7
5
18
0.25
43
31
-55 to +150
70
3
300
0.6
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
Nm
S16-1602-Rev. E, 15-Aug-16
1
Document Number: 91509
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SiHF7N60E
www.vishay.com
SiHF7N60E
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
65
4.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
VDS
VDS/TJ
VGS(th)
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
IGSS
IDSS
RDS(on)
gfs
VGS = ± 20 V
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.5 A
VDS = 50 V, ID = 3.5 A
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Related a
Effective Output Capacitance, Time
Related b
Ciss
Coss
Crss
Co(er)
Co(tr)
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 10 V ID = 3.5 A, VDS = 480 V
VDD = 480 V, ID = 3.5 A,
VGS = 10 V, Rg = 9.1
f = 1 MHz, open drain
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
D
Pulsed Diode Forward Current
integral reverse
G
ISM p - n junction diode
S
MIN.
609
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.68
-
-
-
-
-
0.5
1.9
680
39
5
34
100
20
5
9
13
13
24
14
1.1
-
-
Diode Forward Voltage
VSD
TJ = 25 °C, IS = 3.5 A, VGS = 0 V
--
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
trr
Qrr
IRRM
TJ = 25 °C, IF = IS = 3.5 A,
dI/dt = 100 A/μs, VR = 20 V
- 230
- 1.9
- 14
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
MAX. UNIT
-
-
4
± 100
±1
1
10
0.6
-
V
V/°C
V
nA
μA
μA
S
-
-
-
pF
-
-
40
- nC
-
26
26
ns
48
28
-
7
A
18
1.2 V
- ns
- μC
-A
S16-1602-Rev. E, 15-Aug-16
2
Document Number: 91509
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SiHF7N60E
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiHF7N60E
Vishay Siliconix
20 TOP 15 V
14 V
13 V
12 V
11 V
16 10 V
9V
8V
7V
6V
12 BOTTOM 5 V
TJ = 25 °C
8
4
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
3
ID = 3.5 A
2.5
2
1.5 VGS = 10 V
1
0.5
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
12
TOP 15 V
14 V
13 V
12 V
11 V
9 10 V
9V
8V
7V
6V
BOTTOM 5 V
6
TJ = 150 °C
3
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
10 000
1000
100
10
Coss
Crss
Ciss
ġ
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
ġ
ġ
1
0 100 200 300 400 500 600
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
TJ = 25 °C
16
12
8 TJ = 150 °C
4
500
50
Coss
6
5
4
Eoss
3
2
1
0
0 5 10 15 20 25
VGS, Gate-to-Source Voltage (V)
50
0 100 200 300 400 500 600
VDS
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - Coss and Eoss vs. VDS
S16-1602-Rev. E, 15-Aug-16
3
Document Number: 91509
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





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