Battery Charger. bq25070 Datasheet

bq25070 Charger. Datasheet pdf. Equivalent

bq25070 Datasheet
Recommendation bq25070 Datasheet
Part bq25070
Description Battery Charger
Feature bq25070; bq25070 www.ti.com SLUSA66 – JULY 2011 1A, Single-Input, Single-Cell LiFePO4 Linear Battery Charg.
Manufacture etcTI
Datasheet
Download bq25070 Datasheet




Texas Instruments bq25070
bq25070
www.ti.com
SLUSA66 JULY 2011
1A, Single-Input, Single-Cell LiFePO4 Linear Battery Charger with 50mA LDO
Check for Samples: bq25070
FEATURES
1
Single Cell LiFePO4 Charging Algorithm
30V Input Rating, With 10.5V Over-Voltage
Protection (OVP)
50mA Integrated Low Dropout Linear
Regulator (LDO)
Programmable Charge Current Through Single
Input Interface (CTRL)
7% Charge Current Regulation Accuracy
Thermal Regulation and Protection
Soft-Start Feature to Reduce Inrush Current
Battery NTC Monitoring
Charging Status Indication
Available in Small 2mm × 3mm 10 Pin SON
Package
APPLICATIONS
Smart Phones
Mobile Phones
Portable Media Players
Low Power Handheld Devices
DESCRIPTION
The bq25070 is a highly integrated LiFePO4 linear battery charger targeted at space-limited portable applications.
It operates from either a USB port or AC Adapter and charges a single-cell LiFePO4 battery with up to 1A of
charge current. The 30V input voltage range with input over-voltage protections supports low-cost unregulated
adapters.
The bq25070 has a single power output that charges the battery and powers the system. The charge current is
programmable up to 1A using the CTRL input. Additionally, a 4.9V ±10% 50mA LDO is integrated into the IC for
supplying low power external circuitry.
The LiFePO4 charging algorithm removes the constant voltage mode control usually present in Li-Ion battery
charge cycles. Instead, the battery is fastcharged to the overcharge voltage and then allowed to relax to a lower
float charge voltage threshold. The removal of the constant voltage control reduces charge time significantly.
During the charge cycle, an internal control loop monitors the IC junction temperature and reduces the charge
current if an internal temperature threshold is exceeded. The charger power stage and charge current sense
functions are fully integrated. The charger function has high accuracy current and voltage regulation loops, and
charge status display.
APPLICATION SCHEMATIC
USB or TA
VBUS
GND
D+
D-
C1
0.1 mF
R1
1 kW
bq25070
CHG
IN
OUT
VGPIO
R2
100 kW
C2
1 mF
CTRL
IMON
BAT
TS
GND
LDO
PWRPD
TEMP
PACK +
PACK -
C3 R5
0.1 mF 1.5 kW R3
1.5 kW
R4
1.5 kW
STATUS
VDD
ABB
VCHG DET
USB DET
VUSBIN
ACDET
GPIO
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011, Texas Instruments Incorporated



Texas Instruments bq25070
bq25070
SLUSA66 JULY 2011
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
PART NUMBER
bq25070DQCR
bq25070DQCT
ILIM(DEF)
300 mA
300 mA
ORDERING INFORMATION(1)
VBAT(OVCH)
3.7 V
VBAT(FLOAT)
3.5 V
3.7 V
3.5 V
VOVP
10.5 V
10.5 V
VLDO
4.9 V
4.9 V
MARKING
QUS
QUS
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder on ti.com (www.ti.com),
ABSOLUTE MAXIMUM RATINGS(1)
over operating free-air temperature range (unless otherwise noted)
VALUE
UNIT
Input Voltage
IN (with respect to GND)
CTRL, TS (with respect to GND)
0.3 to 30
0.3 to 7
V
V
Output Voltage
BAT, OUT, LDO, CHG, IMON (with respect to GND)
0.3 to 7
V
Input Current (Continuous)
IN
1.2 A
Output Current (Continuous) BAT
1.2 A
Output Current (Continuous) LDO
100 mA
Output Sink Current
CHG
5 mA
Junction temperature, TJ
Storage temperature, TSTG
40 to 150
65 to 150
°C
°C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage
values are with respect to the network ground terminal unless otherwise noted.
THERMAL INFORMATION
THERMAL METRIC(1)
bq25070
SON
UNITS
θJA
θJCtop
Junction-to-ambient thermal resistance(2)
Junction-to-case (top) thermal resistance(3)
10 PINS
58.7
3.9
°C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific
JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
RECOMMENDED OPERATING CONDITIONS
IN voltage range
VIN IN operating voltage range
IIN Input current, IN
IOUT Output Current in charge mode, OUT
TJ Junction Temperature
(1) Charge current may be limited at low input voltages due to the dropout of the device.
MIN
3.75 (1)
3.75 (1)
0
MAX
28
10.2
1
1
125
UNITS
V
A
A
°C
2 Copyright © 2011, Texas Instruments Incorporated



Texas Instruments bq25070
bq25070
www.ti.com
SLUSA66 JULY 2011
ELECTRICAL CHARACTERISTICS
Over junction temperature range 0°C TJ 125°C and recommended supply voltage (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
INPUT
VUVLO
VHYS-UVLO
VBATUVLO
VHYS-BUVLO
VIN-SLP
VHYS-INSLP
tDGL(NO-IN)
Under-voltage lock-out
Hysteresis on UVLO
Battery UVLO
Hysteresis on BAT UVLO
Valid input source threshold VIN-SLP above
VBAT
Hysteresis on VIN-SLP
Delay time, input power loss to charger
turn-off
VIN: 0 V 4 V
VIN: 4 V 0 V
VBAT rising
VBAT falling
Input power good if VIN > VBAT +
VIN-SLP
VBAT = 3.6 V, VIN: 3.5 V 4 V
VBAT = 3.6 V, VIN: 4 V 3.5 V
Time measured from VIN: 5 V 2.5 V
1μs fall-time
3.15 3.30 3.55
250
1.95 2.05 2.15
125
30 75 150
18 32 54
32
VOVP
VHYS-OVP
tBLK(OVP)
Input over-voltage protection threshold
Hysteresis on OVP
Input over-voltage blanking time
tREC(OVP)
Input over-voltage recovery time
QUIESCENT CURRENT
VIN: 5 V 11 V
VIN: 11 V 5 V
Time measured from VIN: 11 V 5 V
1μs fall-time to LDO = HI, VBAT = 3.5 V
10.2
10.5
100
100
100
10.8
IBAT(PDWN)
Battery current into BAT, No input connected
IIN(STDBY)
Standby current into IN pin
ICC Active supply current, IN pin
BATTERY CHARGER FAST-CHARGE
VIN = 0 V, VCHG = High, TS Enabled
VIN = 0 V, VCHG = Low, TS Disabled,
TJ = 85°C
CTRL = HI, VIN = 5.5V
CTRL = HI, VIN VOVP
CTRL = HI, VIN > VOVP
VIN = 6 V, No load on OUT pin,
VBAT> VBAT(REG), IC enabled
120 150
6
0.25
0.5
2
3
VBAT(REG)
VBAT(OVCH)
Battery float charge voltage
Battery overcharge voltage threshold
TA = 0°C to 125°C
TA = 25°C
4 pulses on CTRL
3.465
3.465
3.62
87
3.5 3.535
3.5 3.529
3.7 3.78
93 100
5 pulses on CTRL
174 187 200
6 pulses on CTRL
261 280 300
IIN(LIM)
Input Current Limit (selected by CTRL
interface)
7 pulses on CTRL
8 pulses on CTRL
348 374 400
435 467 500
9 pulses on CTRL
608 654 700
10 pulses on CTRL
739 794 850
11 pulses on CTRL
869 935 1000
VDO(IN-OUT)
KIMON
VIN VOUT
Input current monitor ratio
VIN = 3.5 V, IOUT = 0.75 A
KIMON = IIMON / ICHG, RIMON = 1kΩ,
Current programmed using CTRL
500 1400
1
VIMON(MAX)
Maximum IMON voltage
IMON Accuracy
PRE-CHARGE AND CHARGE DONE
IMON open
IIN < 100 mA
IIN = 100 mA to 1 A
25%
10%
1.2 1.25
25%
10%
VLOWV
tDGL1(LOWV)
Pre-charge to fast-charge transition threshold
Deglitch time on pre-charge to fast-charge
transition
2.4 2.5 2.6
25
tDGL2(LOWV)
Deglitch time on fast-charge to pre-charge
transition
25
UNITS
V
mV
V
mV
mV
mV
ms
V
mV
μs
μs
μA
μA
mA
mA
V
V
mA
mV
mA / A
V
V
ms
ms
Copyright © 2011, Texas Instruments Incorporated
3





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