CSD19502Q5B MOSFET Datasheet

CSD19502Q5B Datasheet, PDF, Equivalent


Part Number

CSD19502Q5B

Description

80V N-Channel NexFET Power MOSFET

Manufacture

etcTI

Total Page 13 Pages
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CSD19502Q5B
SLPS413B – DECEMBER 2013 – REVISED MAY 2017
CSD19502Q5B 80 V N-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Logic Level
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
2 Applications
• Secondary Side Synchronous Rectifier
• Motor Control
3 Description
This 3.4 mΩ, 80 V, SON 5 mm × 6 mm NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
Top View
S1
8D
S2
7D
S3
G4
SPACE
SPACE
D
6D
5D
P0093-01
Product Summary
TA = 25°C
VDS Drain-to-Source Voltage
Qg Gate Charge Total (10 V)
Qgd Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
80
48
8.6
VGS = 6 V
VGS = 10 V
2.7
3.8
3.4
UNIT
V
nC
nC
m
m
V
Device
CSD19502Q5B
CSD19502Q5BT
.
Ordering Information(1)
Media
Qty Package
13-Inch Reel 2500 SON 5 x 6 mm
13-Inch Reel 250 Plastic Package
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
80
±20
100
UNIT
V
V
ID
Continuous Drain Current (Silicon limited),
TC = 25°C
Continuous Drain Current(1)
157
17
IDM Pulsed Drain Current(2)
Power Dissipation(1)
PD Power Dissipation, TC = 25°C
400
3.1
195
TJ, Operating Junction and
Tstg Storage Temperature Range
–55 to 150
EAS
Avalanche Energy, single pulse
ID = 74 A, L = 0.1 mH, RG = 25
274
A
A
W
°C
mJ
(1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-
inch thick FR4 PCB.
(2) Max RθJC = 0.8°C/W, pulse duration 100 µs, duty cycle 1%
RDS(on) vs VGS
20
18
TC = 25°C,I D = 19A
TC = 125°C,I D = 19A
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
Gate Charge
10
9
ID = 19A
VDS = 40V
8
7
6
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40 45 50
Qg - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD19502Q5B
CSD19502Q5B
SLPS413B – DECEMBER 2013 – REVISED MAY 2017
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Receiving Notification of Documentation Updates.... 7
6.2 Community Resources.............................................. 7
6.3 Trademarks ............................................................... 7
6.4 Electrostatic Discharge Caution ................................ 7
6.5 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Q5B Package Dimensions ........................................ 8
7.2 Recommended PCB Pattern..................................... 9
7.3 Recommended Stencil Pattern ................................. 9
7.4 Q5B Tape and Reel Information ............................. 10
4 Revision History
Changes from Revision A (June 2014) to Revision B
Page
• Added the Receiving Notification of Documentation Updates and Community Resources sections to Device and
Documentation Support. ........................................................................................................................................................ 7
• Changed the dimension between pads 3 and 4 from 0.028 inches: to 0.050 inches in the Recommended PCB
Pattern section diagram ......................................................................................................................................................... 9
Changes from Original (December 2013) to Revision A
Page
• Added small reel option to ordering information table. .......................................................................................................... 1
• Increased silicon limit for continuous drain current to 157 A. ................................................................................................ 1
• Increased max pulsed current to 400 A. ............................................................................................................................... 1
• Added max power rating when the case temperature is held to 25°C. ................................................................................. 1
• Updated pulsed current conditions to specify duty cycle 1%, pulse duration 100 µs, and Max RθJC = 0.8ºC/W. ........... 1
• Updated Figure 10. ................................................................................................................................................................ 6
• Updated mechanical drawing. ............................................................................................................................................... 8
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Features Product Folder Order Now Technical Doc uments Tools & Software Support & Com munity CSD19502Q5B SLPS413B – DECEMB ER 2013 – REVISED MAY 2017 CSD19502Q5 B 80 V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanch e Rated • Logic Level • Pb-Free Ter minal Plating • RoHS Compliant • Ha logen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • Secondary S ide Synchronous Rectifier • Motor Con trol 3 Description This 3.4 mΩ, 80 V, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in powe r conversion applications. Top View S1 8D S2 7D S3 G4 SPACE SPACE D 6D 5D P0093-01 Product Summary TA = 25° C VDS Drain-to-Source Voltage Qg Gate C harge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Re sistance VGS(th) Threshold Voltage TYP ICAL VALUE 80 48 8.6 VGS = 6 V VGS = 10 V 2.7 3.8 3.4 UNIT V nC nC mΩ mΩ V Device CSD19502Q5B CSD19502Q5BT . Ordering Information(1) Media Qty Package 13-Inch Ree.
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