ZVN4525Z MOSFET Datasheet

ZVN4525Z Datasheet, PDF, Equivalent


Part Number

ZVN4525Z

Description

N-CHANNEL ENHANCEMENT MODE MOSFET

Manufacture

Diodes

Total Page 7 Pages
Datasheet
Download ZVN4525Z Datasheet


ZVN4525Z
Green ZVN4525Z
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
250V
RDS(ON)
8.5Ω @ VGS = 10V
ID
TA = +25°C
240mA
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
Features
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT89
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Finish Annealed over Copper Lead
frame. Solderable per MIL-STD-202, Method 208
Weight: 0.052 grams (Approximate)
SOT89
D
Top View
Pin-out
Top View
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
ZVN4525ZTA
Compliance
Standard
Case
SOT89
Quantity per Reel
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N52
N52 = Marking Code
ZVN4525Z
Document number: DS33384 Rev. 3 - 2
1 of 7
www.diodes.com
April 2015
© Diodes Incorporated

ZVN4525Z
ZVN4525Z
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current, VGS = 10V
Maximum Body Diode Forward Current
Pulsed Drain Current (Note 7)
Pulsed Source Current (Note 7)
Steady TA = +25°C (Note 5)
State TA = +70°C (Note 5)
Symbol
VDSS
VGSS
ID
IS
IDM
ISM
Value
250
±40
240
192
1.1
1.44
1.44
Unit
V
V
mA
A
A
A
Thermal Characteristics
Total Power Dissipation
Linear Derating Factor
Characteristic
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
TA = +25°C (Note 5)
Steady State (Note 5)
Steady State (Note 6)
Symbol
PD
RθJA
TJ, TSTG
Value
1.2
9.6
103
50
-55 to +150
Unit
W
mW/°C
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Diode Forward Voltage (Note 8)
Forward Transconductance (Note 10)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
250

0.8

0.3



Typ
285
35
1
1.4
5.6
5.9
6.4
475
72
11
3.6
2.6
0.2
0.5
1.25
1.70
11.40
3.50
186
34
Max
500
100
1.8
8.5
9.0
9.5
0.97
3.65
0.28
0.70

260
48
Unit
Test Condition
V VGS = 0V, ID = 1mA
nA VDS = 250V, VGS = 0V
nA VGS = 40V, VDS = 0V
V VDS = VGS, ID = 1mA
VGS = 10V, ID = 500mA
VGS = 4.5V, ID = 360mA
VGS = 2.4V, ID = 20mA
V VGS = 0V, IS = 360mA
S VDS = 10V, ID = 0.3A
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
nCVDS = 25V, ID = 360mA, VGS = 10V
ns
VDD = 50V, RG = 6.0,
ID= 200mA, RD = 4.4
ns
nC
IF = 360mA, dI/dt = 100A/μs
Notes:
5. For a device surface mounted on 25mm X 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air condition.
6. For a device surface mounted on FR4 PCB measured at t 5 secs.
7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal.
8. Measured under pulsed conditions. Width=300μs. Duty cycle ≤ 2%.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
ZVN4525Z
Document number: DS33384 Rev. 3 - 2
2 of 7
www.diodes.com
April 2015
© Diodes Incorporated


Features Green ZVN4525Z N-CHANNEL ENHANCEMENT MOD E MOSFET Product Summary V(BR)DSS 250 V RDS(ON) 8.5Ω @ VGS = 10V ID TA = +25°C 240mA Description This new gene ration MOSFET is designed to minimize t he on-state resistance (RDS(ON)) and ye t maintain superior switching performan ce, making it ideal for high efficiency power management applications. Applica tions  Power Management Functions Battery Operated Systems and Solid-St ate Relays  Drivers: Relays, Solenoi ds, Lamps, Hammers, Displays, Memories, Transistors, etc Features  Low Gat e Threshold Voltage  Low Input Capac itance  Fast Switching Speed  Lea d-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “ Green” Device (Note 3) Mechanical Dat a  Case: SOT89  Case Material: Mo lded Plastic, “Green” Molding Compo und. UL Flammability Classification Rat ing 94V-0  Moisture Sensitivity: Lev el 1 per J-STD-020  Terminals: Finis h – Matte Tin Finish Annealed over Copper Lead frame. Solderable per MIL-STD-202, Method 208  Wei.
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