FZ750R65KE3 Module Datasheet

FZ750R65KE3 Datasheet, PDF, Equivalent


Part Number

FZ750R65KE3

Description

Highly Insulated Module

Manufacture

Infineon

Total Page 9 Pages
Datasheet
Download FZ750R65KE3 Datasheet


FZ750R65KE3
FZ750R65KE3
hochisolierendesModulmitTrench/FeldstoppIGBT3undEmitterControlled3Diode
highlyinsulatedmodulewithTrench/FieldstopIGBT3andEmitterControlled3diode
PotentielleAnwendungen
• Mittelspannungsantriebe
• Traktionsumrichter
ElektrischeEigenschaften
• NiedrigesVCEsat
MechanischeEigenschaften
AlSiC Bodenplatte für erhöhte thermische
Lastwechselfestigkeit
Erweiterter Lagertemperaturbereich bis zu Tstg =
-55°C
• GehäusemitCTI>600
Gehäuse mit erweiterten
Isolationseigenschaftenvon10,4kVAC10s
• GroßeLuft-undKriechstrecken
VCES = 6500V
IC nom = 750A / ICRM = 1500A
PotentialApplications
• Mediumvoltageconverters
• Tractiondrives
ElectricalFeatures
• LowVCEsat
MechanicalFeatures
AlSiC base plate for increased thermal cycling
capability
Extended storage temperature down to Tstg =
-55°C
• PackagewithCTI>600
Package with enhanced insulation of 10.4kV AC
10s
• Highcreepageandclearancedistances
ModuleLabelCode
BarcodeCode128
DMX-Code
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
Digit
1-5
6-11
12-19
20-21
22-23
Datasheet
www.infineon.com
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V3.3
2019-09-06

FZ750R65KE3
FZ750R65KE3
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 125°C
Tvj = 25°C
Tvj = -50°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VCES 
ICDC 
ICRM 
VGES 
6500
6500
5900
750
1500
+/-20
V
A
A
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 750 A
VGE = 15 V
IC = 100 mA, VCE = VGE, Tvj = 25°C
Tvj = 25°C
Tvj = 125°C
Gateladung
Gatecharge
VGE = -15 / 15 V, VCE = 3600 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1000 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1000 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 6500 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 750 A, VCE = 3600 V
VGE = -15 / 15 V
RGon = 1,0
Tvj = 25°C
Tvj = 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 750 A, VCE = 3600 V
VGE = -15 / 15 V
RGon = 1,0
Tvj = 25°C
Tvj = 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 750 A, VCE = 3600 V
VGE = -15 / 15 V
RGoff = 6,8
Tvj = 25°C
Tvj = 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 750 A, VCE = 3600 V
VGE = -15 / 15 V
RGoff = 6,8
Tvj = 25°C
Tvj = 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 750 A, VCE = 3600 V, Lσ = 280 nH
VGE = -15 / 15 V, RGon = 1,0
Tvj = 25°C
Tvj = 125°C
VCE sat
min. typ. max.
3,00 3,40
3,70 4,20
V
V
VGEth 5,40 6,00 6,60 V
QG 31,0 µC
RGint
0,75
Cies 205 nF
Cres 3,20 nF
ICES 5,0 mA
IGES 400 nA
td on
0,70 µs
0,80 µs
tr
0,33 µs
0,40 µs
td off
7,30 µs
7,60 µs
tf
0,40 µs
0,50 µs
4200
mJ
Eon
6500
mJ
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 750 A, VCE = 3600 V, Lσ = 280 nH
VGE = -15 / 15 V, RGoff = 6,8
Tvj = 25°C
Tvj = 125°C
Eoff
3600
4200
mJ
mJ
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 4500 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 125°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
ISC
RthJC
RthCH
Tvj op
4500
A
8,70 K/kW
8,80 K/kW
-50 125 °C
Datasheet
2 V3.3
2019-09-06


Features FZ750R65KE3 hochisolierendesModulmitT rench/FeldstoppIGBT3undEmitterContr olled3Diode highlyinsulatedmodulew ithTrench/FieldstopIGBT3andEmitter Controlled3diode PotentielleAnwendu ngen • Mittelspannungsantriebe • Tr aktionsumrichter ElektrischeEigenschaf ten • NiedrigesVCEsat MechanischeEi genschaften • AlSiC Bodenplatte für erhöhte thermische Lastwechselfestigke it • Erweiterter Lagertemperaturberei ch bis zu Tstg = -55°C • Gehäusemi tCTI>600 • Gehäuse mit erweiterte n Isolationseigenschaftenvon10,4kVAC 10s • GroßeLuft-undKriechstrecke n VCES = 6500V IC nom = 750A / ICRM = 1500A PotentialApplications • Medium voltageconverters • Tractiondrives ElectricalFeatures • LowVCEsat Mec hanicalFeatures • AlSiC base plate f or increased thermal cycling capability • Extended storage temperature down to Tstg = -55°C • PackagewithCTI> 600 • Package with enhanced insulati on of 10.4kV AC 10s • Highcreepageandclearancedistances ModuleLabelCode BarcodeCode128 DMX.
Keywords FZ750R65KE3, datasheet, pdf, Infineon, Highly, Insulated, Module, Z750R65KE3, 750R65KE3, 50R65KE3, FZ750R65KE, FZ750R65K, FZ750R65, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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