FCH041N60F-F085 MOSFET Datasheet

FCH041N60F-F085 Datasheet, PDF, Equivalent


Part Number

FCH041N60F-F085

Description

N-Channel SuperFET II FRFET MOSFET

Manufacture

ON Semiconductor

Total Page 8 Pages
Datasheet
Download FCH041N60F-F085 Datasheet


FCH041N60F-F085
FCH041N60F-F085
N-Channel SuperFET II FRFET MOSFET
600 V, 76 A, 41 mΩ
Features
„ Typical RDS(on) = 36 mΩ at VGS = 10 V, ID = 38 A
„ Typical Qg(tot) = 267 nC at VGS = 10V, ID = 38 A
„ Low Effective Output Capacitance (Typical Coss(eff.) = 720 nF)
„ 100% Avalanche Tested
„ Qualified to AEC Q101
„ RoHS Compliant
Description
SuperFET® II MOSFET is ON Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching performance,
dv/dt rate and higher avalanche energy. Consequently SuperFETII is
very well suited for the Soft switching and Hard Switching topologies
like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved
Boost PFC, Boost PFC for HEV-EV automotive.
SuperFET II FRFET® MOSFET’s optimized body diode reverse
recovery performance can remove additional component and
improve system reliability.
G
D
S
G
TO-247
Application
„ Automotive On Board Charger
„ Automotive DC/DC converter for HEV
Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10)
Pulsed Drain Current
EAS
dv/dt
Single Pulse Avalanche Rating
MOSFET dv/dt
Peak Diode Recovery dv/dt
PD
Power Dissipation
Derate Above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient
TC = 25°C
(Note 1)
(Note 2)
(Note 3)
Ratings
600
±20
76
See Fig 4
2025
100
50
595
4.76
-55 to + 150
0.21
40
D
S
Units
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCH041N60F FCH041N60F-F085
TO-247
-
-
30
Notes:
1: Starting TJ = 25°C, L = 18mH, IAS = 15A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche.
2: ISD 38A, di/dt 200 A/us, VDD 380V, starting TJ = 25°C.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface
presented here is
of the
based
drain pins. RθJC is
on mounting on a 1
guaranteed by design,
in2 pad of 2oz copper.
while
RθJAis
determined
by
the
board
design.
The maximum rating
©2015 Semiconductor Components Industries, LLC.
August-2017, Rev. 2
Publication Order Number:
FCH041N60F-F085/D

FCH041N60F-F085
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage
IDSS Drain to Source Leakage Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS=600V, TJ = 25oC
VGS = 0V
TJ = 150oC(Note 4)
VGS = ±20V
600
-
-
-
- -V
- 10 μA
- 1 mA
- ±100 nA
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
ID = 38A,
TJ = 25oC
VGS = 10V TJ = 150oC(Note 5)
3
-
-
45V
36 41 mΩ
89 98 mΩ
Ciss
Coss
Crss
Coss(eff)
Rg
Qg(ToT)
Qg(th)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Gate Resistance
Total Gate Charge
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VDS = 100V, VGS = 0V,
f = 1MHz
VDS = 0V to 480V, VGS = 0V
f = 1MHz
VDD = 380V
ID = 38A
VGS = 10V
- 10900 -
- 360
-
- 4.4
-
- 720
-
- 0.7
-
- 267 347
- 20 26
- 59 -
- 106 -
pF
pF
pF
pF
Ω
nC
nC
nC
nC
Switching Characteristics
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
VDD = 380V, ID = 38A,
VGS = 10V, RG = 4.7Ω
- 242 ns
- 63 - ns
- 48 - ns
- 214 -
ns
- 33 - ns
- - 514 ns
VSD Source to Drain Diode Voltage
Trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD = 38A, VGS = 0V
IF = 38A, dISD/dt = 100A/μs
VDD = 480V
--
- 219
- 1.9
Notes:
4: The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production.
1.2
-
-
V
ns
μC
www.onsemi.com
2


Features FCH041N60F-F085 N-Channel SuperFET II FR FET MOSFET FCH041N60F-F085 N-Channel S uperFET II FRFET MOSFET 600 V, 76 A, 41 mΩ Features „ Typical RDS(on) = 36 mΩ at VGS = 10 V, ID = 38 A „ Typica l Qg(tot) = 267 nC at VGS = 10V, ID = 3 8 A „ Low Effective Output Capacitance (Typical Coss(eff.) = 720 nF) „ 100% Avalanche Tested „ Qualified to AEC Q1 01 „ RoHS Compliant Description SuperF ET® II MOSFET is ON Semiconductor’s brand-new high voltage super-junction ( SJ) MOSFET family that is utilizing cha rge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailor ed to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Conse quently SuperFETII is very well suited for the Soft switching and Hard Switchi ng topologies like High Voltage Full Br idge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automo tive. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery pe.
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