IXTA02N250 MOSFET Datasheet

IXTA02N250 Datasheet, PDF, Equivalent


Part Number

IXTA02N250

Description

High Voltage Power MOSFET

Manufacture

IXYS

Total Page 5 Pages
Datasheet
Download IXTA02N250 Datasheet


IXTA02N250
High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Fast Intrinsic Diode
IXTA02N250
IXTH02N250
IXTV02N250S
VDSS =
ID25 =
RDS(on)
2500V
200mA
450Ω
TO-263 (IXTA)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
Mounting Force (PLUS220 & TO-263)
TO-263
PLUS220
TO-247
Maximum Ratings
2500
2500
V
V
±20 V
±30 V
200 mA
600 mA
83 W
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
300
260
1.13 / 10
11..65 / 25..14.6
°C
°C
Nm/lb.in
N/lb.
2.5 g
4.0 g
6.0 g
G
S
D (Tab)
TO-247 (IXTH)
G
DS
D (Tab)
PLUS220SMD (IXTV_S)
G
S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = 0.8 • VDSS
TJ = 125°C
RDS(on)
VGS = 10V, ID = 50mA, Note 1
Characteristic Values
Min. Typ. Max.
2500
V
2.5 4.5 V
±100 nA
5 μA
500 μA
450 Ω
Features
z Fast Intrinsic Diode
z Low Package Inductance
Advantages
z Easy to Mount
z Space Savings
Applications
z High Voltage Power Supplies
z Capacitor Discharge
z Pulse Circuits
© 2012 IXYS CORPORATION, All Rights Reserved
DS100187C(04/12)

IXTA02N250
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs VDS = 100V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 100Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
TO-247 & PLUS220
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = 100mA, VGS = 0V, Note 1
trr IF = 200mA, -di/dt = 50A/μs, VR = 100V
IXTA02N250 IXTH02N250
IXTV02N250S
Characteristic Values
Min. Typ. Max.
TO-247 Outline
88 145
mS
116 pF
8 pF
3 pF
123
P
19 ns
19 ns
32 ns
33 ns
7.4 nC
0.7 nC
5.3 nC
1.5 °C/W
0.25 °C/W
Characteristic Values
Min. Typ. Max.
200 mA
800 mA
2.0 V
e
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
2 - Drain
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
PLUS220SMD Outline
1.5 μs
EA
E1 L2 A1
E1
Note 1. Pulse test, t 300μs, duty cycle, d 2%.
*Additional provisions for lead to lead voltage isolation are required at VDS > 1200V.
TO-263 Outline
D
L3
A3
L
L1
2X b
e
c
A2
L4
1. Gate 2. Drain
3. Source 4. Drain
PIN: 1 - Gate
2 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Features High Voltage Power MOSFETs N-Channel Enh ancement Mode Fast Intrinsic Diode IXT A02N250 IXTH02N250 IXTV02N250S VDSS = ID25 = ≤RDS(on) 2500V 200mA 450Ω T O-263 (IXTA) Symbol VDSS VDGR VGSS VGS M ID25 IDM PD TJ TJM Tstg TL TSOLD Md F C Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1M Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) from Case for 1 0s Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220 & TO- 263) TO-263 PLUS220 TO-247 Maximum Rat ings 2500 2500 V V ±20 V ±30 V 200 mA 600 mA 83 W - 55 ... +150 150 - 5 5 ... +150 °C °C °C 300 260 1.13 / 10 11..65 / 25..14.6 °C °C Nm/lb.in N/lb. 2.5 g 4.0 g 6.0 g G S D (Tab) TO-247 (IXTH) G DS D (Tab) PLUS220SM D (IXTV_S) G S D (Tab) G = Gate S = Source D = Drain Tab = Drain Symbol Test Conditions (TJ = 25°C, Unless Ot herwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = 0..
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