S2N7002K MOSFET Datasheet

S2N7002K Datasheet, PDF, Equivalent


Part Number

S2N7002K

Description

N-Channel Enhancement Mode Power MOSFET

Manufacture

SeCoS

Total Page 3 Pages
Datasheet
Download S2N7002K Datasheet


S2N7002K
Elektronische Bauelemente
S2N7002K
115mA, 60V
N-Channel Enhancement Mode Power MOSFET
FEATURES
Low on resistance.
Fast switching speed.
Low-voltage drive.
Easily designed drive circuits.
Easy to parallel.
Pb-Free package is available.
ESD protected:2000V
DEVICE MARKING: RK
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
3 DRAIN
1
GATE
*
* Gate
Pretection
Diode
SOURCE 2
SOT-23
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
- 0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Drain – Source Voltage
Gate – Source Voltage
Drain Current
Continuous
Pulsed
Drain Reverse Current
Continuous
Pulsed
Total Power Dissipation
Channel & Storage Temperature
Note: 1. Pulse width 10µS, Duty cycle1%.
VDSS
60
VGSS
±20
ID 115
IDP1 0.8
IDR
IDRP1
PD2
115
0.8
225
TCH, TSTG
150, -55~150
2. When mounted on 1x0.75x0.062 inch glass epoxy board.
V
V
mA
A
mA
A
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
Gate-Source Leakage Current
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
IGSS
V(BR)DSS
IDSS
VGS(TH)
- - ±10
60 -
-
- -1
1
1.85
2.5
µA
V
µA
V
Drain-Source On-State Resistance*
RDS(ON) *
-
-
- 7.5
- 7.5
Forward Transfer Admittance
|YFS|* 80 -
- mS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
- 25 50
- 10 25 pF
- 3.0 5.0
Turn-on Delay Time
Turn-off Delay Time
Td(ON) *
Td(OFF) *
-
-
12 20
nS
20 30
* Pulse width 300µS, Duty cycle1%
TEST CONDITION
VGS=±20V, VDS=0V
VGS=0V, ID =10µA
VDS=60V, VGS=0V
VDS= VGS, ID =250µA
VGS=10V, ID=0.5A
VGS=5V, ID=0.05A
VDS=10V, ID=0.2A
VDS=25V
VGS=0V
f=1MHz
VDD30V, V Gs=10V
I D=200mA, RL=150, RGS=10
SWITCHING CHARACTERISTICS MEASUREMENT CIRCUIT
08-Mar-2010 Rev. B
Page 1 of 3

S2N7002K
Elektronische Bauelemente
CHARACTERISTIC CURVES
S2N7002K
115mA, 60V
N-Channel Enhancement Mode Power MOSFET
08-Mar-2010 Rev. B
Page 2 of 3


Features Elektronische Bauelemente S2N7002K 115m A, 60V N-Channel Enhancement Mode Power MOSFET FEATURES Low on resistance. Fa st switching speed. Low-voltage drive. Easily designed drive circuits. Easy to parallel. Pb-Free package is available . ESD protected:2000V DEVICE MARKING: R K RoHS Compliant Product A Suffix of -C” specifies halogen & lead-free 3 DRAIN 1 GATE * * Gate Pretection D iode SOURCE 2 SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.0 4 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2. 04 0.30 0.50 REF. G H J K L Millimete r Min. Max. - 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) P ARAMETER SYMBOL RATING UNIT Drain Source Voltage Gate – Source Volt age Drain Current Continuous Pulsed Drain Reverse Current Continuous Pulse d Total Power Dissipation Channel & S torage Temperature Note: 1. Pulse widt h ≦10µS, Duty cycle≦1%. VDSS 60 VGSS ±20 ID 115 IDP1 0.8 IDR IDRP1.
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