FGH60T65SHD IGBT Datasheet

FGH60T65SHD Datasheet, PDF, Equivalent


Part Number

FGH60T65SHD

Description

60A Field Stop Trench IGBT

Manufacture

ON Semiconductor

Total Page 8 Pages
Datasheet
Download FGH60T65SHD Datasheet


FGH60T65SHD
FGH60T65SHD
650 V, 60 A Field Stop Trench IGBT
Features
• Maximum Junction Temperature : TJ =175oC
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 60 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
General Description
Using novel field stop IGBT technology, ON Semiconductor's
new series of field stop 3rd generation IGBTs offer the
optimum performance for solar inverter, UPS, welder, telecom,
ESS and PFC applica-tions where low conduction and
switching losses are essential.
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
C
G CE
TO-247
long leads
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ILM (1)
ICM (2)
IF
IFM (2)
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. VCC = 400 V, VGE = 15 V, IC =180 A, RG = 27  Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
©2014 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
G
E
FGH60T65SHD-F155
650
20
30
120
60
180
180
60
30
180
349
174
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
Publication Order Number:
FGH60T65SHD-F155/D

FGH60T65SHD
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FGH60T65SHD-F155
0.43
1.25
40
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width
FGH60T65SHD-F155 FGH60T65SHD TO-247 G03
Tube
--
Unit
oC/W
oC/W
oC/W
Quantit
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES /
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 1 mA
IC = 1 mA, Reference to 25oC
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 60 mA, VCE = VGE
IC = 60 A, VGE = 15 V
ITCC==6107A5,oVCGE = 15 V,
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
VCC = 400 V, IC = 60 A,
RInGdu=ct6ive ,LVoGaEd,=T1C5=V2,5oC
VCC = 400 V, IC = 60 A,
RInGdu=ct6ive ,LVoGaEd,=T1C5=V1,75oC
650 - - V
- 0.6 - V/oC
- - 250 A
-
-
±400
nA
4.0 5.5 7.5
- 1.6 2.1
- 2.14 -
V
V
V
- 2980 -
- 110 -
- 36 -
pF
pF
pF
- 26 -
- 48 -
- 87 -
- 47 -
- 1.69 -
- 0.63 -
- 2.32 -
- 25 -
- 60 -
- 93 -
- 72 -
- 2.54 -
- 1.04 -
- 3.58 -
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
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Features FGH60T65SHD 650 V, 60 A Field Stop Trenc h IGBT FGH60T65SHD 650 V, 60 A Field S top Trench IGBT Features • Maximum J unction Temperature : TJ =175oC • Pos itive Temperature Co-efficient for Easy Parallel Operating • High Current Ca pability • Low Saturation Voltage: VC E(sat) =1.6 V(Typ.) @ IC = 60 A • 100 % of the Parts Tested for ILM(1) • Hi gh Input Impedance • Fast Switching Tighten Parameter Distribution • R oHS Compliant General Description Usin g novel field stop IGBT technology, ON Semiconductor's new series of field sto p 3rd generation IGBTs offer the optimu m performance for solar inverter, UPS, welder, telecom, ESS and PFC applica-ti ons where low conduction and switching losses are essential. Applications • Solar Inverter, UPS, Welder, Telecom, E SS, PFC C G CE TO-247 long leads Ab solute Maximum Ratings TC = 25°C unles s otherwise noted Symbol Description VCES VGES IC ILM (1) ICM (2) IF IFM (2 ) PD TJ Tstg TL Collector to Emitter Voltage Gate to Emitter Voltage Transient Ga.
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