BTC4621K3 Transistor Datasheet

BTC4621K3 Datasheet, PDF, Equivalent


Part Number

BTC4621K3

Description

High Voltage NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 4 Pages
Datasheet
Download BTC4621K3 Datasheet


BTC4621K3
CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
BTC4621K3
Spec. No. : C210K3
Issued Date : 2006.12.08
Revised Date :
Page No. : 1/4
Features
High breakdown voltage. (BVCEO =350V)
Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.
Pb-free package
Symbol
BTC4621K3
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation (TA=25)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
Tj
Tstg
BTC4621K3
Limit
350
350
6
100
200
50
1
150
-55~+150
Unit
V
V
V
mA
mA
W
°C
°C
CYStek Product Specification

BTC4621K3
CYStech Electronics Corp.
Spec. No. : C210K3
Issued Date : 2006.12.08
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
hFE
fT
Cob
Min.
350
350
6
-
-
-
-
100
-
-
Typ.
-
-
-
-
-
0.1
-
70
2.6
Max.
-
-
-
0.1
0.1
0.6
1
320
-
-
Unit
V
V
V
μA
μA
V
V
-
MHz
pF
Test Conditions
IC=50μA, IE=0
IC=1mA, IB=0
IE=50μA, IC=0
VCB=300V, IE=0
VEB=6V, IC=0
IC=20mA, IB=2mA
IC=20mA, IB=2mA
VCE=10V, IC=10mA
VCE=30V, IC=10mA, f=10MHz
VCB=30V, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
Classification Of hFE
Rank
Range
E
100~200
F
160~320
BTC4621K3
CYStek Product Specification


Features CYStech Electronics Corp. High Voltage N PN Epitaxial Planar Transistor BTC4621K 3 Spec. No. : C210K3 Issued Date : 200 6.12.08 Revised Date : Page No. : 1/4 Features • High breakdown voltage. (B VCEO =350V) • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA /1mA. • Pb-free package Symbol BTC462 1K3 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collec tor-Emitter Voltage Emitter-Base Voltag e Collector Current (DC) Collector Curr ent (Pulse) Base Current Power Dissipat ion (TA=25℃) Junction Temperature Sto rage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD Tj Tstg BTC4621K3 Limit 350 350 6 100 200 50 1 150 -55~+150 U nit V V V mA mA W °C °C CYStek Produ ct Specification CYStech Electronics C orp. Spec. No. : C210K3 Issued Date : 2006.12.08 Revised Date : Page No. : 2/ 4 Characteristics (Ta=25°C) Symbol B VCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *V BE(sat) hFE fT Cob Min. 350 350 6 100 - Typ. 0.1 70 2.6 Max. 0.1 0.1 0.6 1 320.
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