BTD1805AT3 Transistor Datasheet

BTD1805AT3 Datasheet, PDF, Equivalent


Part Number

BTD1805AT3

Description

Low Vcesat NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 7 Pages
Datasheet
Download BTD1805AT3 Datasheet


BTD1805AT3
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1805AT3
Spec. No. : C820T3
Issued Date : 2017.01.10
Revised Date : 2018.07.02
Page No. : 1/ 7
Description
The device is manufactured in NPN planar technology by using a Base Islandlayout. The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
Very low collector-to-emitter saturation voltage
Fast switching speed
High current gain characteristic
Large current capability
Pb-free lead plating package
Applications
CCFL drivers
Voltage regulators
Relay drivers
High efficiency low voltage switching applications
Symbol
BTD1805AT3
Outline
TO-126
BBase
CCollector
EEmitter
BTD1805AT3
ECB
CYStek Product Specification

BTD1805AT3
CYStech Electronics Corp.
Spec. No. : C820T3
Issued Date : 2017.01.10
Revised Date : 2018.07.02
Page No. : 2/ 7
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage (IE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage (IC=0)
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @ TA=25
Power Dissipation @ TC=25
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
ICP
IB
PD
PD
RθJA
RθJC
Tj
Tstg
120
60
8
5
10 (Note 1)
2
1.5
20
83.3
6.25
150
-55~+150
V
V
V
A
A
W
C/W
C/W
C
C
Note : 1. Single Pulse , Pw38s,Duty2%.
Characteristics (Ta=25C)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
120
-
- V IC=100μA, IE=0
*BVCEO
60
-
- V IC=1mA, IB=0
BVEBO
8
-
- V IC=100μA, IC=0
ICBO - - 0.1 μA VCB=120V, IE=0
IEBO - - 0.1 μA VEB=8V, IC=0
*VCE(sat) 1
-
- 50 mV IC=100mA, IB=5mA
*VCE(sat) 2
-
190 250 mV IC=2A, IB=50mA
*VCE(sat) 3
-
230 300 mV IC=3A, IB=150mA
*VCE(sat) 4
-
- 400 mV IC=5A, IB=200mA
*VCE(sat) 5
-
- 300 mV IC=2A, IB=20mA
*VCE(sat) 6
-
- 500 mV IC=2A, IB=10mA
*VBE(sat)
-
0.9 1
V IC=2A, IB=100mA
*hFE 1
200
-
450
- VCE=2V, IC=100mA
*hFE 2
120
-
-
- VCE=2V, IC=5A
*hFE 3 40 - - - VCE=2V, IC=10A
fT - 150 - MHz VCE=10V, IC=50mA
Cob - 50 - pF VCB=10V, f=1MHz
ton
tstg
tf
-
-
-
50 -
1.35 2.5
120 1000
ns
μs
ns
VCC=30V, IC=10IB1=-10IB2=1A,
RL=30Ω
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
BTD1805AT3
CYStek Product Specification


Features CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1805AT3 Spec. No. : C820T3 Issued Date : 2017 .01.10 Revised Date : 2018.07.02 Page N o. : 1/ 7 Description The device is ma nufactured in NPN planar technology by using a “Base Island” layout. The r esulting transistor shows exceptional h igh gain performance coupled with very low saturation voltage. Features  V ery low collector-to-emitter saturation voltage  Fast switching speed  H igh current gain characteristic  Lar ge current capability  Pb-free lead plating package Applications  CCFL drivers  Voltage regulators  Rela y drivers  High efficiency low volta ge switching applications Symbol BTD18 05AT3 Outline TO-126 B:Base C:Co llector E:Emitter BTD1805AT3 ECB CYS tek Product Specification CYStech Elec tronics Corp. Spec. No. : C820T3 Issue d Date : 2017.01.10 Revised Date : 2018 .07.02 Page No. : 2/ 7 Absolute Maximu m Ratings (Ta=25C) Parameter Collector-Base Voltage (IE=0) Collector-Emitter Voltage (IB=0.
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