2CLG100KV Assembly Datasheet

2CLG100KV Datasheet, PDF, Equivalent


Part Number

2CLG100KV

Description

High voltage silicon rectifier Assembly

Manufacture

HVGT

Total Page 2 Pages
Datasheet
Download 2CLG100KV Datasheet


2CLG100KV
2CLG100KV/1A
1.0A 100kV 100nS--High voltage silicon rectifier Assembly
HVGT High voltage silicon rectifier is made
of high quality glass passivated chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
SHAPE DISPLAY:
FEATURES:
1. High reliability design.
2. High voltage design.
3. High frequency design..
4. Conform to RoHS.
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
SIZE: (Unit:mm)
HVGT NAME: HVC-152520
APPLICATIONS:
1. High frequency switching power supply.
2. Power supply of laser equipment .
3. General purpose high voltage rectifier.
4. Other.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: external lead.
3. Net weight: 144 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Repetitive Peak Renerse Voltage
VRRM
Ta=25°C;
Average Output Current
IF Ta=40°C;Resistive Load
Suege Current
IFSM Ta=25°C; 8.3 mS; 1/2 Sine(60Hz)
Junction Temperature
TJ
Allowable Operation Case Temperature
Tc
Storage Temperature
TSTG
Data Value Units
100
1.0
30
-40~+125
125
-40~+125
kV
A
A
°C
°C
°C
ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless otherwise specified)
Items
Symbols
Condition
Maximum Forward Voltage Drop
Maximum Reverse Current
Maximum Reverse Recovery Time
Junction Capacitance
VF at 25°C;IF =IF(AV)
IR1 at 25°C;VR =VRRM
IR2 at 100°C;VR =VRRM
TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR
CJ at 25°C; VR=0V; f=1MHz
Data value Units
120 V
5.0 uA
50 uA
100 nS
-- pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638
2016 1 / 2

2CLG100KV
2CLG100KV/1A
1.0A 100kV 100nS--High voltage silicon rectifier Assembly
Fig 1
Forward Current Derating Curve
Fig 2
Reverse Recovery Measurement Waveform
Typical data capture points: IF =0.5IR , IR,IRR =0.25IR
IR is typically the rated average forward current maximum
(IFAVM) of the D.U.T
Fig 3
Non-Repetitive Surge Current
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638
2016 2 / 2


Features 2CLG100KV/1A 1.0A 100kV 100nS--High volt age silicon rectifier Assembly HVGT Hi gh voltage silicon rectifier is made of high quality glass passivated chip and high reliability epoxy resin sealing s tructure, and through professional test ing equipment inspection qualified afte r to customers. SHAPE DISPLAY: FEATUR ES: 1. High reliability design. 2. High voltage design. 3. High frequency desi gn.. 4. Conform to RoHS. 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. SIZE: (Unit:mm) HVGT NAM E: HVC-152520 APPLICATIONS: 1. High fr equency switching power supply. 2. Powe r supply of laser equipment . 3. Genera l purpose high voltage rectifier. 4. Ot her. MECHANICAL DATA: 1. Case: epoxy re sin molding. 2. Terminal: external lead . 3. Net weight: 144 grams (approx). M AXIMUM RATINGS AND CHARACTERISTICS: (Ab solute Maximum Ratings) Items Symbols Condition Repetitive Peak Renerse Vo ltage VRRM Ta=25°C; Average Output Current IF Ta=40°C;Resistive Load Suege Current IFSM Ta=25°C;.
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