CRVT200 Diode Datasheet

CRVT200 Datasheet, PDF, Equivalent


Part Number

CRVT200

Description

High Voltage Silicon Rectifier Diode

Manufacture

HVGT

Total Page 2 Pages
Datasheet
Download CRVT200 Datasheet


CRVT200
CRVT200 25mA 20kV 100nS
High Voltage Silicon Rectifier Diode
----------------------------------------------------------------------------------------------------------------------------- -------
INTRODUCE:
SHAPE DISPLAY:
HVGT high voltage silicon rectifier diodes is made
of high quality silicon wafer chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
FEATURES:
1. Fast switching.
2. High reliability.
3. High current capability.
4. Conform to RoHS and SGS.
SIZE: (Unit:mm)
HVGT NAME: DO-415
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
APPLICATIONS:
1. Rectifier for high voltage power supply.
2. General purpose high voltage rectifier. .
3. Rectification for X-ray generator high voltage
power supply.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 0.65 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Data Value Units
Repetitive Peak Renerse Voltage
Non-Repetitive Peak Renerse Voltage
VRRM
VRSM
TA=25°C
TA=25°C
20 kV
-- kV
Average Forward Current Maximum
IFAVM
TA=75°C
TOIL=75°C
25 mA
-- mA
Non-Repetitive Forward Surge Current
IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS
3.0
A
Junction Temperature
TJ
125 °C
Allowable Operation Case Temperature
Tc
-40~+125
°C
Storage Temperature
ELECTRICAL CHARACTERISTICS:
Items
TSTG
TA=25°C (Unless Otherwise Specified)
Symbols
Condition
-40~+125
°C
Data value Units
Maximum Forward Voltage Drop
VFM
at 25°C; at IFAVM
35 V
Maximum Reverse Current
IR1 at 25°C; at VRRM
IR2 at 100°C; at VRRM
1.0 uA
25 uA
Maximum Reverse Recovery Time
TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR 100 nS
Junction Capacitance
CJ at 25°C; VR=0V; f=1MHz
1.0 pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2019-01 1 / 2

CRVT200
CRVT200 25mA 20kV 100nS
High Voltage Silicon Rectifier Diode
----------------------------------------------------------------------------------------------------------------------------- -------
Forward Current Derating Curve
Reverse Recovery Measurement Waveform
Average Forward Current-%
125
TRR
100 IF
75
0
50
IRR
25
0 IR
0 25 50 75 100 125 150 175 Typical data capture points: IF =0.5IR , IR,IRR =0.25IR
Temperature()
IR is typically the rated average forward current maximum
(IFAVM) of the D.U.T
Non-Repetitive Surge Current
100
Peak
Forward
Surge
Current
-%
75
50
25
0
1
Marking
Type
CRVT200
10
Cycles (60Hz)
Code
CRVT200
HVGT
100
Cathode Mark
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2019-01 2 / 2


Features CRVT200 25mA 20kV 100nS High Voltage Si licon Rectifier Diode ---------------- --------------------------------------- --------------------------------------- ------------------------------- ------- INTRODUCE: SHAPE DISPLAY: HVGT high voltage silicon rectifier diodes is ma de of high quality silicon wafer chip and high reliability epoxy resin seali ng structure, and through professional testing equipment inspection qualifie d after to customers. FEATURES: 1. Fa st switching. 2. High reliability. 3. High current capability. 4. Conform t o RoHS and SGS. SIZE: (Unit:mm) HVGT NAME: DO-415 5. Epoxy resin molded in vacuumHave anticorrosion in the surfac e. APPLICATIONS: 1. Rectifier for hig h voltage power supply. 2. General pur pose high voltage rectifier. . 3. Rect ification for X-ray generator high volt age power supply. MECHANICAL DATA: 1 . Case: epoxy resin molding. 2. Termin al: welding axis. 3. Net weight: 0.65 grams (approx). MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute.
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