HV10G25 Diode Datasheet

HV10G25 Datasheet, PDF, Equivalent


Part Number

HV10G25

Description

High Voltage Silicon Rectifier Diode

Manufacture

HVGT

Total Page 2 Pages
Datasheet
Download HV10G25 Datasheet


HV10G25
HV10G25 10mA 25kV 100nS
High Voltage Silicon Rectifier Diode
----------------------------------------------------------------------------------------------------------------------------- -------
Introduce:
Reference Shape:
HVGT high voltage silicon rectifier diodes is made of
high quality silicon wafer chip and high reliability
epoxy resin sealing structure, and through
professional testing equipment inspection qualified
after to customers.
Features:
Fast recovery.
High reliability design.
Low current, high voltage.
Conform to RoHS and SGS.
Epoxy resin molded in vacuumHave anticorrosion in
the surface.
Applications:
HVGT Name:
Unit: (mm)
Air purification, negative ions.
DO-312
Electrostatic voltage doubling circuit.
Lead Diameter 0.6±0.03
Copier and X-ray.
Other high voltage rectifier circuits.
Mechanical Data:
Case: epoxy resin molding.
Terminal: welding axis.
Net weight: 0.34 grams (approx).
26.0
(min)
12.0
(max)
Maximum Ratings And Characteristics: (Absolute Maximum Ratings)
26.0
(min)
3.0
(max)
Items
Symbols
Condition
Data Value Units
Repetitive Peak Renerse Voltage
VRRM
TA=25°C
Non-Repetitive Peak Renerse Voltage
VRSM
TA=25°C
Average Forward Current Maximum
IFAVM
TA=25°C
TOIL=55°C
Non-Repetitive Forward Surge Current
IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS
Junction Temperature
TJ
Allowable Operation Case Temperature
Tc
Storage Temperature
TSTG
Electrical Characteristics: TA=25°C (Unless Otherwise Specified)
Items
Symbols
Condition
25
--
10
--
1.0
125
-40~+125
-40~+125
kV
kV
mA
mA
A
°C
°C
°C
Data value Units
Maximum Forward Voltage Drop
Maximum Reverse Current
Maximum Reverse Recovery Time
Junction Capacitance
VFM at 25°C; at IFAVM
55 V
IR1 at 25°C; at VRRM
2.0 uA
IR2 at 100°C; at VRRM
5.0 uA
TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR 100 nS
CJ at 25°C; VR=0V; f=1MHz
1.0 pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 Nov-19 1 / 2

HV10G25
HV10G25 10mA 25kV 100nS
High Voltage Silicon Rectifier Diode
----------------------------------------------------------------------------------------------------------------------------- -------
Forward Current Derating Curve
Reverse Recovery Measurement Waveform
Average Forward Current-%
125
100
TRR
IF
75 0
50 IRR
25
IR
0 Typical data capture points: IF =0.5IR , IR,IRR =0.25IR
0 25 50 75 100 125 150 175 IR is typically the rated average forward current maximum
Temperature(°C)
(IFAVM) of the D.U.T
Non-Repetitive Surge Current
100
Peak
Forward
Surge
Current
-%
75
50
25
0
1
Marking
Type
HV10G25
10
Cycles (60Hz)
Code
B25
100
Cathode Mark
Bulk Packaging
Tape Reel
Packaging Standard
Label part munber nothing "TR"
Package standard download link:
Label part munber has TR
http://www.hvgtsemi.com/newsv_492.html
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 Nov-19 2 / 2


Features HV10G25 10mA 25kV 100nS High Voltage Sil icon Rectifier Diode ----------------- --------------------------------------- --------------------------------------- ------------------------------ ------- Introduce: Reference Shape: HVGT hig h voltage silicon rectifier diodes is m ade of high quality silicon wafer chip and high reliability epoxy resin sealin g structure, and through professional t esting equipment inspection qualified a fter to customers. Features: Fast recov ery. High reliability design. Low curre nt, high voltage. Conform to RoHS and S GS. Epoxy resin molded in vacuumHave an ticorrosion in the surface. Applicatio ns: HVGT Name: Unit: (mm) Air purifi cation, negative ions. DO-312 Electro static voltage doubling circuit. Lead Diameter 0.6±0.03 Copier and X-ray. Other high voltage rectifier circuits. Mechanical Data: Case: epoxy resin mo lding. Terminal: welding axis. Net weig ht: 0.34 grams (approx). 26.0 (min) 1 2.0 (max) Maximum Ratings And Characteristics: (Absolute Maximu.
Keywords HV10G25, datasheet, pdf, HVGT, High, Voltage, Silicon, Rectifier, Diode, V10G25, 10G25, 0G25, HV10G2, HV10G, HV10, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)