ISL73444SEH Amplifiers Datasheet

ISL73444SEH Datasheet, PDF, Equivalent


Part Number

ISL73444SEH

Description

Low-power Operational Amplifiers

Manufacture

Intersil

Total Page 27 Pages
Datasheet
Download ISL73444SEH Datasheet


ISL73444SEH
DATASHEET
ISL70444SEH, ISL73444SEH
19MHz Radiation Hardened 40V Quad Rail-to-Rail Input - Output,
Low-Power Operational Amplifiers
FN8411
Rev.7.00
Aug 16, 2019
The ISL70444SEH and ISL73444SEH (ISL7x444SEH) feature
four low-power amplifiers optimized to provide maximum
dynamic range. These operational amplifiers (op amps)
feature a unique combination of rail-to-rail operation on the
input and output as well as a slew enhanced front-end that
provides ultra fast slew rates positively proportional to a given
step size, thereby increasing accuracy under transient
conditions, whether it’s periodic or momentary. The
ISL7x444SEH also offer low power, low offset voltage, and low
temperature drift, making them ideal for applications
requiring both high DC accuracy and AC performance. With
<5µs recovery for Single Event Transients (SET)
(LETTH = 86.4MeV•cm2/mg), the number of filtering
components needed is drastically reduced. The ISL7x444SEH
are also immune to single event latch-up because they are
fabricated using the Renesas proprietary PR40 Silicon On
Insulator (SOI) process.
The amplifiers are designed to operate over a single supply
range of 2.7V to 40V or a split supply voltage range of ±1.35V to
±20V. Applications for these amplifiers include precision
instrumentation, data acquisition, precision power supply
controls, and process controls.
The ISL7x444SEH are available in a 14 Ld hermetic ceramic
flatpack and die forms that operate across the temperature
range of -55°C to +125°C.
Applications
• Precision instruments
• Active filter blocks
• Data acquisition
• Power supply control
• Process control
Features
• Electrically screened to DLA SMD# 5962-13214
• Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer
• <5µs recovery from SEE (LETTH = 86.4MeV•cm2/mg)
• Unity gain stable
• Rail-to-rail input and output
• Wide gain·bandwidth product . . . . . . . . . . . . . . . . . . . . 19MHz
• Wide single and dual supply range. . . . . . . . 2.7V to 40V max
• Low input offset voltage . . . . . . . . . . . . . . . . . . . . . . . . . 400µV
• Low current consumption (per amplifier) . . . . . . . 1.1mA, typ
• No phase reversal with input overdrive
• Slew rate
- Large signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V/µs
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• ISL70444SEH radiation acceptance (see TID report)
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)
(ISL70444SEH only)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .50krad(Si)
• ISL73444SEH radiation acceptance (see TID report)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .50krad(Si)
• SEE hardness (see SEE report for details)
- SEB LETTH (VS = ±21V). . . . . . . . . . . . . . 86.4MeV•cm2/mg
- SEL immune (SOI Process)
Related Literature
• For a full list of related documents, visit our website:
- ISL70444SEH, ISL73444SEH device pages
RF
+
RSENSE
RIN-
10kΩ
RIN+
10kΩ
LOAD
100kΩ
-IN -
+2.7V
to 40V
V+ VOUT
ISL7x444
+IN +
V-
VOUT = 10
RREF+
(ILOAD * RSENSE)
100kΩ
VREF
FIGURE 1. TYPICAL APPLICATION: SINGLE-SUPPLY, HIGH-SIDE
CURRENT SENSE AMPLIFIER
FN8411 Rev.7.00
Aug 16, 2019
30
VS ±18V
20
10
0 GROUNDED
-10
BIASED
-20
-30 0
50 100 150 200 250
krad (Si)
300
FIGURE 2. VOS SHIFT vs HIGH DOSE RATE RADIATION
Page 1 of 27

ISL73444SEH
ISL70444SEH, ISL73444SEH
Table of Contents
Pin Configuration. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin Descriptions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Thermal Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Specifications VS = ±18V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Specifications VS = ±2.5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical Specifications VS = ±1.5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Electrical Specifications VS = ±18V - Post Radiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Electrical Specifications VS = ±2.5V - Post Radiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Electrical Specifications VS = ±1.5V - Post Radiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Typical Performance Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Post High Dose Rate Radiation Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Post Low Dose Rate Radiation Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Applications Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Input Performance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Input ESD Diode Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Output Short-Circuit Current Limiting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Output Phase Reversal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Slew Rate Enhancement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Unused Channel Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Die Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Die Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Interface Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Assembly Related Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Additional Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Weight of Packaged Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Lid Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Metallization Mask Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Revision History. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Package Outline Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
FN8411 Rev.7.00
Aug 16, 2019
Page 2 of 27


Features DATASHEET ISL70444SEH, ISL73444SEH 19MH z Radiation Hardened 40V Quad Rail-to-R ail Input - Output, Low-Power Operation al Amplifiers FN8411 Rev.7.00 Aug 16, 2019 The ISL70444SEH and ISL73444SEH ( ISL7x444SEH) feature four low-power amp lifiers optimized to provide maximum dy namic range. These operational amplifie rs (op amps) feature a unique combinati on of rail-to-rail operation on the inp ut and output as well as a slew enhance d front-end that provides ultra fast sl ew rates positively proportional to a g iven step size, thereby increasing accu racy under transient conditions, whethe r it’s periodic or momentary. The ISL 7x444SEH also offer low power, low offs et voltage, and low temperature drift, making them ideal for applications requ iring both high DC accuracy and AC perf ormance. With <5µs recovery for Single Event Transients (SET) (LETTH = 86.4Me V•cm2/mg), the number of filtering co mponents needed is drastically reduced. The ISL7x444SEH are also immune to single event latch-up because th.
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