LM27222 Driver Datasheet

LM27222 Datasheet, PDF, Equivalent


Part Number

LM27222

Description

High-Speed 4.5A Synchronous MOSFET Driver

Manufacture

etcTI

Total Page 18 Pages
Datasheet
Download LM27222 Datasheet


LM27222
LM27222
www.ti.com
SNVS306B – SEPTEMBER 2004 – REVISED MARCH 2013
LM27222 High-Speed 4.5A Synchronous MOSFET Driver
Check for Samples: LM27222
FEATURES
1
2 Adaptive Shoot-through Protection
• 10ns Dead Time
• 8ns Propagation Delay
• 30ns Minimum On-time
• 0.4Pull-down and 0.9Pull-up Drivers
• 4.5A Peak Driving Current
• MOSFET Tolerant Design
• 5µA Quiescent Current
• 30V Maximum Input Voltage in Buck
Configuration
• 4V to 6.85V Operating Voltage
• SOIC-8 and WSON Packages
APPLICATIONS
• High Current Buck And Boost Voltage
Converters
• Fast Transient DC/DC Power Supplies
• Single Ended Forward Output Rectification
• CPU And GPU Core Voltage Regulators
DESCRIPTION
The LM27222 is a dual N-channel MOSFET driver
designed to drive MOSFETs in push-pull
configurations as typically used in synchronous buck
regulators. The LM27222 takes the PWM output from
a controller and provides the proper timing and drive
levels to the power stage MOSFETs. Adaptive shoot-
through protection prevents damaging and efficiency
reducing shoot-through currents, thus ensuring a
robust design capable of being used with nearly any
MOSFET. The adaptive shoot-through protection
circuitry also reduces the dead time down to as low
as 10ns, ensuring the highest operating efficiency.
The peak sourcing and sinking current for each driver
of the LM27222 is about 3A and 4.5Amps
respectively with a Vgs of 5V. System performance is
also enhanced by keeping propagation delays down
to 8ns. Efficiency is once again improved at all load
currents by supporting synchronous, non-
synchronous, and diode emulation modes through the
LEN pin. The minimum output pulse width realized at
the output of the MOSFETs is as low as 30ns. This
enables high operating frequencies at very high
conversion ratios in buck regulator designs. To
support low power states in notebook systems, the
LM27222 draws only 5µA from the 5V rail when the
IN and LEN inputs are low or floating.
Typical Application
VCC
4V to 6.85V
R1
C1
D1
U1
6
VCC
CB
(to controller) 5
LEN
HG
(to controller) 4
LM27222
IN SW
8 GND
LG
3
2
1
7
C2
0.33 PF
VIN
Q1 up to 30V
+
C3
L1 VOUT
Q2
+
C4
0.5V to
Vin - 0.5V
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004–2013, Texas Instruments Incorporated

LM27222
LM27222
SNVS306B – SEPTEMBER 2004 – REVISED MARCH 2013
Connection Diagram
SW 1
HG 2
CB 3
IN 4
8 GND
7 LG
6 VCC
5 LEN
Figure 1. Top View
SOIC-8 (Package # D0008A) θJA = 172°C/W
or
WSON-8 (Package # NGT0008A) θJA = 39°C/W
www.ti.com
Pin #
1
2
3
4
5
6
7
8
Pin Name
SW
HG
CB
IN
LEN
VCC
LG
GND
PIN DESCRIPTIONS
Pin Function
High-side driver return. Should be connected to the common node of high and low-side MOSFETs.
High-side gate drive output. Should be connected to the high-side MOSFET gate. Pulled down internally to
SW with a 10K resistor to prevent spurious turn on of the high-side MOSFET when the driver is off.
Bootstrap. Accepts a bootstrap voltage for powering the high-side driver.
Accepts a PWM signal from a controller. Active High. Pulled down internally to GND with a 150K resistor to
prevent spurious turn on of the high-side MOSFET when the controller is inactive.
Low-side gate enable. Active High. Pulled down internally to GND with a 150K resistor to prevent spurious
turn-on of the low-side MOSFET when the controller is inactive.
Connect to +5V supply.
Low-side gate drive output. Should be connected to low-side MOSFET gate. Pulled down internally to GND
with a 10K resistor to prevent spurious turn on of the low-side MOSFET when the driver is off.
Ground.
Block Diagram
VCC
LEN
150k
IN
150k
Logic
Shoot-through
Protection
Level
Shifter
CB
HG
10k
SW
+
-
LG
10k
GND
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2 Submit Documentation Feedback
Product Folder Links: LM27222
Copyright © 2004–2013, Texas Instruments Incorporated


Features LM27222 www.ti.com SNVS306B – SEPTEM BER 2004 – REVISED MARCH 2013 LM2722 2 High-Speed 4.5A Synchronous MOSFET Dr iver Check for Samples: LM27222 FEATUR ES 1 •2 Adaptive Shoot-through Protec tion • 10ns Dead Time • 8ns Propaga tion Delay • 30ns Minimum On-time • 0.4Ω Pull-down and 0.9Ω Pull-up Dr ivers • 4.5A Peak Driving Current • MOSFET Tolerant Design • 5µA Quiesc ent Current • 30V Maximum Input Volta ge in Buck Configuration • 4V to 6.85 V Operating Voltage • SOIC-8 and WSON Packages APPLICATIONS • High Current Buck And Boost Voltage Converters • Fast Transient DC/DC Power Supplies • Single Ended Forward Output Rectificat ion • CPU And GPU Core Voltage Regula tors DESCRIPTION The LM27222 is a dual N-channel MOSFET driver designed to dr ive MOSFETs in push-pull configurations as typically used in synchronous buck regulators. The LM27222 takes the PWM o utput from a controller and provides th e proper timing and drive levels to the power stage MOSFETs. Adaptive shootthrough protection prevents.
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