MJ15003 Transistors Datasheet

MJ15003 Datasheet, PDF, Equivalent


Part Number

MJ15003

Description

20A Complementary Power Transistors

Manufacture

Multicomp

Total Page 5 Pages
Datasheet
Download MJ15003 Datasheet


MJ15003
MJ15003, MJ15004
20A Complementary Power Transistors
The MJ15003 and MJ15004 are power base power transistors designed for high
power audio, disk head positioners, linear amplifiers, switching regulators and other
linear applications.
Features:
High Power Dissipation
PD = 250W (TC = 25°C)
High DC current Gain and Low Saturation Voltage
hFE = 25 (Minimum) at IC = 5.0A, VCE = 2.0V.
For Low Distortion Complementary designs.
Pin 1. Base
2. Emitter
Collector(Case)
Maximum Ratings
Dimensions Minimum Maximum
A
38.75
39.96
B
19.28
22.23
C 7.96 9.28
D
11.18
12.19
E
25.20
26.67
F 0.92 1.09
G 1.38 1.62
H
29.90
30.40
I
16.64
17.30
J 3.88 4.36
K
10.67
11.18
Dimensions : Millimetres
NPN
MJ15003
PNP
MJ15004
20 Ampere
Complementary
Silicon Power
Transistors
140 Volts
250 Watts
TO-3
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak (1)
Base Current-Continuous
-Peak (1)
Total Power Dissipation at TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
(1) Pulse Test: Pulse Width = 5ms, Duty Cycle <10%.
Symbol
VCEO(sus)
VCBO
VEBO
IC
ICM
IB
IBM
PD
TJ, TSTG
Rating
140
5.0
20
30
5.0
10
250
1.43
-65 to +200
Unit
V
A
W
W/°C
°C
Page 1
31/05/05 V1.0

MJ15003
MJ15003, MJ15004
20A Complementary Power Transistors
Thermal Characteristics
Characteristic
Thermal Resistance Junction to Case
Figure - 1 Power Derating
Symbol
Rθjc
Maximum
0.70
Unit
°C/W
TC, Temperature (°C)
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Minimum
OFF Characteristics
Collector-Emitter Sustaining Voltage (2)
(IC = 200mA, IB = 0)
Collector Cut off Current
(VCE = 140V, IB = 0)
Collector Cut off Current
(VCE = 140V, VBE(off) = 1.5V)
(VCE = 140V, VBE(off) = 1.5V, TC = 150°C)
VCEO(sus)
ICEO
ICEX
Emitter Cut off Current
(VEB = 5.0V, IC = 0)
ON Characteristics (2)
IEBO
DC Current Gain
(IC = 5.0A, VCE = 2.0V)
Collector-Emitter Saturation Voltage
(IC = 5.0A, IB = 500mA)
Base-Emitter On Voltage
(IC = 5.0A, VCE = 2.0A)
Dynamic Characteristics
Current Gain-Bandwidth Product (3)
(IC = 500mA, VCE = 10V, f = 0.5MHz)
Output Capacitance
(VCB = 4.0V, IE = 0, f = 1MHz)
hFE
VCE(sat)
VBE(on)
fT
Cob
(2) Pulse Test : Pulse Width = 300µs, Duty Cycle 2.0%.
(3) fT = hfe • ftest
140
-
-
-
25
-
-
2.0
-
Maximum
-
250
100
2.0
100
150
1.0
2.0
-
1000
Unit
V
µA
µA
mA
µA
-
V
MHz
pF
Page 2
31/05/05 V1.0


Features MJ15003, MJ15004 20A Complementary Power Transistors The MJ15003 and MJ15004 ar e power base power transistors designed for high power audio, disk head positi oners, linear amplifiers, switching reg ulators and other linear applications. Features: • High Power Dissipation PD = 250W (TC = 25°C) • High DC curren t Gain and Low Saturation Voltage hFE = 25 (Minimum) at IC = 5.0A, VCE = 2.0V. • For Low Distortion Complementary d esigns. Pin 1. Base 2. Emitter Collect or(Case) Maximum Ratings Dimensions Mi nimum Maximum A 38.75 39.96 B 19.2 8 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1 .62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 Dimension s : Millimetres NPN MJ15003 PNP MJ150 04 20 Ampere Complementary Silicon Pow er Transistors 140 Volts 250 Watts TO- 3 Characteristic Collector-Emitter Vol tage Collector-Base Voltage Emitter-Bas e Voltage Collector Current-Continuous -Peak (1) Base Current-Continuous -Peak (1) Total Power Dissipation at.
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