BTD1857AJ3G Transistor Datasheet

BTD1857AJ3G Datasheet, PDF, Equivalent


Part Number

BTD1857AJ3G

Description

Silicon NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 8 Pages
Datasheet
Download BTD1857AJ3G Datasheet


BTD1857AJ3G
CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTD1857AJ3G
BVCEO
IC
RCESAT
Spec. No. : C855J3G
Issued Date : 2004.10.04
Revised Date :2010.12.08
Page No. : 1/7
160V
1.5A
310mΩ
Description
High BVCEO
High current capability
Complementary to BTB1236AJ3G
RoHS compliant and Halogen-free package
Symbol
BTD1857AJ3G
Outline
TO-252AB
TO-252AA
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @TA=25
Power Dissipation @TC=25
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
Tj
Tstg
BTD1857AJ3G
BCE
B CE
Limits
180
160
5
1.5
3
1
10
150
-55~+150
Unit
V
V
V
A
A
W
W
°C
°C
CYStek Product Specification

BTD1857AJ3G
CYStech Electronics Corp.
Spec. No. : C855J3G
Issued Date : 2004.10.04
Revised Date :2010.12.08
Page No. : 2/7
Characteristics (Ta=25°C)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
180
-
-
V IC=50µA, IE=0
BVCEO
160
-
-
V IC=1mA, IB=0
BVEBO
5
-
-
V IE=50µA, IC=0
ICBO - - 1 µA VCB=160V, IE=0
IEBO - - 1 µA VEB=4V, IC=0
*VCE(sat)
-
- 0.6 V IC=1A, IB=100mA
*VBE(on)
-
- 1.5 V VCE=5V, IC=150mA
hFE1
160
-
320
- VCE=5V, IC=150mA
hFE2
30
-
-
- VCE=5V, IC=500mA
fT - 140 - MHz VCE=5V, IC=150mA
Cob - 27 - pF VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380µs, Duty Cycle2%
Ordering Information
Device
BTD1857AJ3G
Package
TO-252
(RoHS compliant and Halogen-free)
Shipping
2500 pcs / Tape & Reel
Marking
D1857A
BTD1857AJ3G
CYStek Product Specification


Features CYStech Electronics Corp. Silicon NPN E pitaxial Planar Transistor BTD1857AJ3G BVCEO IC RCESAT Spec. No. : C855J3G I ssued Date : 2004.10.04 Revised Date :2 010.12.08 Page No. : 1/7 160V 1.5A 310m Ω Description • High BVCEO • High current capability • Complementary t o BTB1236AJ3G • RoHS compliant and Ha logen-free package Symbol BTD1857AJ3G Outline TO-252AB TO-252AA B:Base C :Collector E:Emitter Absolute Maxi mum Ratings (Ta=25°C) Parameter Colle ctor-Base Voltage Collector-Emitter Vol tage Emitter-Base Voltage Collector Cur rent (DC) Collector Current (Pulse) Pow er Dissipation @TA=25℃ Power Dissipat ion @TC=25℃ Junction Temperature Stor age Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg BTD1857AJ3G BCE B CE Limits 180 160 5 1.5 3 1 10 150 -55 ~+150 Unit V V V A A W W °C °C CYSt ek Product Specification CYStech Elect ronics Corp. Spec. No. : C855J3G Issue d Date : 2004.10.04 Revised Date :2010. 12.08 Page No. : 2/7 Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Co.
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