BTD1858T3 Transistor Datasheet

BTD1858T3 Datasheet, PDF, Equivalent


Part Number

BTD1858T3

Description

Silicon NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 7 Pages
Datasheet
Download BTD1858T3 Datasheet


BTD1858T3
CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTD1858T3
Spec. No. : C856T3
Issued Date : 2007.03.20
Revised Date :
Page No. : 1/7
Description
High BVCEO
High current capability
Pb-free package
Symbol
BTD1858T3
Outline
TO-126
BBase
CCollector
EEmitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @TA=25
Power Dissipation @TC=25
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : Single Pulse , Pw380μs,Duty2%.
BTD1858T3
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
180
180
5
1.5
3 (Note)
1
15
125
8.33
150
-55~+150
Unit
V
V
V
A
A
W
W
°C/W
°C/W
°C
°C
CYStek Product Specification

BTD1858T3
CYStech Electronics Corp.
Spec. No. : C856T3
Issued Date : 2007.03.20
Revised Date :
Page No. : 2/7
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(on)
hFE1
hFE2
fT
Cob
Min.
180
180
5
-
-
-
-
-
180
30
-
-
Typ.
-
-
-
-
-
0.15
-
-
-
-
140
27
Max.
-
-
-
1
1
0.3
0.4
0.8
560
-
-
-
Unit
V
V
V
µA
µA
V
V
V
-
-
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=160V, IE=0
VEB=4V, IC=0
IC=1A, IB=100mA
IC=1A, IB=50mA
VCE=5V, IC=5mA
VCE=5V, IC=200mA
VCE=5V, IC=500mA
VCE=5V, IC=150mA
VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380µs, Duty Cycle2%
Classification of hFE 1
Rank
Range
R
180~390
S
270~560
Ordering Information
Device
BTD1858T3
Package
TO-126
(Pb-free)
Shipping
250 pcs / bag, 10 bags / box
Marking
D1858
BTD1858T3
CYStek Product Specification


Features CYStech Electronics Corp. Silicon NPN Ep itaxial Planar Transistor BTD1858T3 Sp ec. No. : C856T3 Issued Date : 2007.03. 20 Revised Date : Page No. : 1/7 Descr iption • High BVCEO • High current capability • Pb-free package Symbol B TD1858T3 Outline TO-126 B:Base C Collector E:Emitter BCE Absolute M aximum Ratings (Ta=25°C) Parameter Col lector-Base Voltage Collector-Emitter V oltage Emitter-Base Voltage Collector C urrent (DC) Collector Current (Pulse) P ower Dissipation @TA=25℃ Power Dissip ation @TC=25℃ Thermal Resistance, Jun ction to Ambient Thermal Resistance, Ju nction to Case Junction Temperature Sto rage Temperature Note : Single Pulse , Pw≦380μs,Duty≦2%. BTD1858T3 Symbo l VCBO VCEO VEBO IC ICP PD PD RθJA Rθ JC Tj Tstg Limits 180 180 5 1.5 3 (Not e) 1 15 125 8.33 150 -55~+150 Unit V V V A A W W °C/W °C/W °C °C CYStek Product Specification CYStech Electron ics Corp. Spec. No. : C856T3 Issued Da te : 2007.03.20 Revised Date : Page No. : 2/7 Characteristics (Ta=25°C) Symbol BVCBO BVCE.
Keywords BTD1858T3, datasheet, pdf, CYStech, Silicon, NPN, Epitaxial, Planar, Transistor, TD1858T3, D1858T3, 1858T3, BTD1858T, BTD1858, BTD185, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)