MBR2H100SFT3G Rectifier Datasheet

MBR2H100SFT3G Datasheet, PDF, Equivalent


Part Number

MBR2H100SFT3G

Description

Surface Mount Schottky Power Rectifier

Manufacture

ON Semiconductor

Total Page 5 Pages
Datasheet
Download MBR2H100SFT3G Datasheet


MBR2H100SFT3G
MBR2H100SFT3G,
NRVB2H100SFT3G
Surface Mount
Schottky Power Rectifier
Plastic SOD−123FL Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. Because of its small size, it is ideal for use in
portable and battery powered products such as cellular and cordless
phones, chargers, notebook computers, printers, PDAs and PCMCIA
cards. Typical applications are AC−DC and DC−DC converters,
reverse battery protection, and “Oring” of multiple supply voltages
and any other application where performance and size are critical.
Features
Guardring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V−0
Package Designed for Optimal Automated Board Assembly
ESD Ratings: Machine Model, C
Human Body Model, 3B
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
Reel Options: MBR2H100SFT3G = 10,000 per 13 in reel/8 mm tape
Device Marking: L2H
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES
100 VOLTS
SOD−123FL
CASE 498
MARKING DIAGRAM
L2HMG
G
L2H = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MBR2H100SFT3G
Package
Shipping
SOD−123 10000 / Tape &
(Pb−Free)
Reel
NRVB2H100SFT3G SOD−123 10000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 2
1
Publication Order Number:
MBR2H100SF/D

MBR2H100SFT3G
MBR2H100SFT3G, NRVB2H100SFT3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 V
Average Rectified Forward Current
(TL = 146°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IO
IFSM
2.0 A
50 A
Storage and Operating Junction Temperature Range (Note 1)
Tstg, TJ
−65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
ELECTRICAL CHARACTERISTICS
YJCL
RqJA
RqJA
23 °C/W
85 °C/W
330 °C/W
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 4)
(IF = 1.0 A, TJ = 25°C)
(IF = 2.0 A, TJ = 25°C)
(IF = 1.0 A, TJ = 125°C)
(IF = 2.0 A, TJ = 125°C)
VF V
0.76
0.84
0.61
0.68
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR
40 mA
0.5 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width 380 ms, Duty Cycle 2.0%.
http://onsemi.com
2


Features MBR2H100SFT3G, NRVB2H100SFT3G Surface M ount Schottky Power Rectifier Plastic S OD−123FL Package This device uses the Schottky Barrier principle with a larg e area metal−to−silicon power diode . Ideally suited for low voltage, high frequency rectification or as free whee ling and polarity protection diodes in surface mount applications where compac t size and weight are critical to the s ystem. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and c ordless phones, chargers, notebook comp uters, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and D C−DC converters, reverse battery prot ection, and “Oring” of multiple sup ply voltages and any other application where performance and size are critical . Features • Guardring for Stress Pro tection • Low Forward Voltage • 175 °C Operating Junction Temperature • Epoxy Meets UL 94 V−0 • Package Des igned for Optimal Automated Board Assembly • ESD Ratings: Machine Model, C Human Body Mode.
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