VS-HFA04SD60SHM3 Diode Datasheet

VS-HFA04SD60SHM3 Datasheet, PDF, Equivalent


Part Number

VS-HFA04SD60SHM3

Description

Ultrafast Soft Recovery Diode

Manufacture

Vishay

Total Page 7 Pages
Datasheet
Download VS-HFA04SD60SHM3 Datasheet


VS-HFA04SD60SHM3
www.vishay.com
VS-HFA04SD60SHM3
Vishay Semiconductors
HEXFRED®,
Ultrafast Soft Recovery Diode, 4 A
TO-252AA (D-PAK)
2, 4
1
N/C
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr typ.
TJ max.
Diode variation
TO-252AA (D-PAK)
4A
600 V
1.4 V
17 ns
150 °C
Single die
FEATURES
• Ultrafast recovery time
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
• Guaranteed avalanche
• Specified at operating temperature
• AEC-Q101 qualified
• Meets JESD 201 class 2 whisker test
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION / APPLICATIONS
These diodes are optimized to reduce losses and EMI / RFI
in high frequency power conditioning systems. The softness
of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
freewheeling, flyback, power converters, motor drives, and
other applications where high speed and reduced switching
losses are design requirements.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Repetitive peak forward current
Maximum power dissipation
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
IFRM
PD
TJ, TStg
TEST CONDITIONS
TC = 100 °C
TC = 116 °C
TC = 100 °C
VALUES
600
4
25
16
10
-55 to +150
UNITS
V
A
W
°C
Revision: 15-Jul-15
1 Document Number: 94756
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-HFA04SD60SHM3
www.vishay.com
VS-HFA04SD60SHM3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
Forward voltage
See fig. 1
IF = 4 A
VF IF = 8 A
IF = 4 A, TJ = 125 °C
Maximum reverse
leakage current
VR = VR rated
IR
TJ = 125 °C, VR = 0.8 x VR rated
Junction capacitance
CT VR = 200 V
Series inductance
LS Measured lead to lead 5 mm from package body
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.5
1.8
1.4
0.17
44
4
8.0
MAX.
-
1.8
2.2
1.7
3.0
300
8
-
UNITS
V
μA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
IF = 1.0 A, dIF/dt = 200 A/μA, VR = 30 V
- 17
Reverse recovery time
trr TJ = 25 °C
TJ = 125 °C
- 28
- 38
Peak recovery current
Reverse recovery charge
IRRM
Qrr
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 4 A
dIF/dt = 200 A/μs
VR = 200 V
- 2.9
- 3.7
- 40
- 70
Rate of fall of recovery current dI(rec)M/dt
TJ = 25 °C
TJ = 125 °C
- 280
- 235
MAX.
-
42
57
5.2
6.7
60
105
-
-
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
TJ, TStg
Thermal resistance,
junction to case
RthJC
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
Weight
Mounting torque
Marking device
Case style TO-252AA (D-PAK)
MIN.
-55
-
-
-
-
6.0
(5.0)
TYP.
-
MAX.
150
UNITS
°C
- 5.0
- 80
2.0 -
0.07 -
12
-
(10)
HFA04SD60SH
°C/W
g
oz.
kgf · cm
(lbf in)
Revision: 15-Jul-15
2 Document Number: 94756
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com VS-HFA04SD60SHM3 Vishay Semiconductors HEXFRED®, Ultrafast So ft Recovery Diode, 4 A TO-252AA (D-PAK ) 2, 4 1 N/C 3 Anode PRODUCT SUMMAR Y Package IF(AV) VR VF at IF trr typ. T J max. Diode variation TO-252AA (D-PAK ) 4A 600 V 1.4 V 17 ns 150 °C Single d ie FEATURES • Ultrafast recovery tim e • Ultrasoft recovery • Very low I RRM • Very low Qrr • Guaranteed ava lanche • Specified at operating tempe rature • AEC-Q101 qualified • Meets JESD 201 class 2 whisker test • Meet s MSL level 1, per J-STD-020, LF maximu m peak of 260 °C • Material categori zation: for definitions of compliance p lease see www.vishay.com/doc?99912 BENE FITS • Reduced RFI and EMI • Reduce d power loss in diode and switching tra nsistor • Higher frequency operation • Reduced snubbing • Reduced parts count DESCRIPTION / APPLICATIONS These diodes are optimized to reduce losses and EMI / RFI in high frequency power c onditioning systems. The softness of the recovery eliminates the need for a snubber in most appl.
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