ZXMN10A08G MOSFET Datasheet

ZXMN10A08G Datasheet, PDF, Equivalent


Part Number

ZXMN10A08G

Description

100V SOT223 N-CHANNEL ENHANCEMENT MODE MOSFET

Manufacture

Diodes

Total Page 7 Pages
Datasheet
Download ZXMN10A08G Datasheet


ZXMN10A08G
Product Summary
V(BR)DSS
100V
RDS(on)
250m@ VGS= 10V
300m@ VGS= 6V
Green ZXMN10A08G
100V SOT223 N-CHANNEL ENHANCEMENT MODE MOSFET
ID
TA = 25°C
2.9A
2.6A
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (Approximate)
Features and Benefits
Low On-Resistance
Fast Switching Speed
Low Threshold
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation trench MOSFET from Zetex features a unique
structure, combining the benefits of low on-resistance and fast
switching, making it ideal for high-efficiency, power management
applications.
Applications
DC-DC Converters
Power Management Functions
Disconnect Switches
Motor Control
SOT223
D
G
Top View
Pin Out - Top
View
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number
ZXMN10A08GTA
Marking
ZXMN10A08
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
ZZXVMNN
1403A1008
ZXMN10A08 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
ZXMN10A08G
Document number: DS33567 Rev. 2 - 2
1 of 7
www.diodes.com
March 2015
© Diodes Incorporated

ZXMN10A08G
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (VGS=10V; TA = +25°C) (Note 6)
(VGS=10V; TA = +70°C) (Note 6)
(VGS=10V; TA = +25°C) (Note 5)
Pulsed Drain Current (Note 7)
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode) (Note 7)
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
ZXMN10A08G
Value
100
±20
2.9
2.3
2.0
11
5
11
Unit
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation at TA = +25°C (Note 5)
Linear Derating Factor
Power Dissipation at TA = +25°C (Note 6)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
TJ, TSTG
Value
2.0
16
3.9
31
62.5
32
-55 to +150
Unit
W
mW/°C
W
mW/°C
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol Min Typ Max Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
100
-
- V VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS - - 0.5 µA VDS =100V, VGS = 0V
Gate-Source Leakage
ON CHARACTERISTICS
IGSS - - 100 nA VGS = ±20V, VDS = 0V
Gate Threshold Voltage
VGS(TH)
2
-
- V VDS = VGS, ID =250µA
Static Drain-Source On-Resistance (Note 8)
RDS(ON)
-
-
0.25
VGS = 10V, ID = 3.2A
- 0.30
VGS = 6V, ID =2.6A
Forward Transconductance (Notes 8 & 10)
Diode Forward Voltage (Note 8)
gfs - 5 - S VDS = 15V, ID =3.2A
VSD
-
0.87 0.95
V
TJ=25°C, IS=3.2A,
VGS=0V
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Gate Charge (Note 9)
Total Gate Charge (Note 9)
Ciss
Coss
Crss
tD(ON)
tR
tD(OFF)
tF
Qg
Qg
- 405 -
- 28.2 -
- 14.2 -
- 3.4 -
- 2.2 -
-8 -
- 3.2 -
- 4.2 -
- 7.7 -
pF
pF
VDS = 50V, VGS = 0V,
f = 1.0MHz
pF
ns
ns VDD = 30V, ID = 1.2A, VGS = 10V,
ns RG =6
ns
nC VDS = 50V, VGS = 5V ID = 1.2A
nC
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
Qgs - 1.8 - nC VDS = 50V, VGS = 10V ID = 1.2A
Qgd - 2.1 - nC
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
-
-
27
32
-
-
ns
nC
TJ=25°C, IS=1.2A, di/dt= 100A/µs
Notes:
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR4 PCB measured at t 10 secs.
7. Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300µs - pulse width limited by maximum junction temperature.
8. Measured under pulsed conditions. Pulse width300µs. Duty cycle 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
ZXMN10A08G
Document number: DS33567 Rev. 2 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated


Features Product Summary V(BR)DSS 100V RDS(on) 250mΩ @ VGS= 10V 300mΩ @ VGS= 6V G reen ZXMN10A08G 100V SOT223 N-CHANNEL E NHANCEMENT MODE MOSFET ID TA = 25°C 2 .9A 2.6A Mechanical Data • Case: SOT 223 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flamma bility Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD -020 • Terminals: Matte Tin Finish Weight: 0.112 grams (Approximate) Fe atures and Benefits • Low On-Resistan ce • Fast Switching Speed • Low Thr eshold • Lead-Free Finish; RoHS Compl iant (Notes 1 & 2) • Halogen and Anti mony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Description This new generation trench MOSFET from Zetex fe atures a unique structure, combining th e benefits of low on-resistance and fas t switching, making it ideal for high-e fficiency, power management application s. Applications • DC-DC Converters Power Management Functions • Disconnect Switches • Motor Control SOT223 D G Top View Pin Out - .
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