MRFX1K80N Transistors Datasheet

MRFX1K80N Datasheet, PDF, Equivalent


Part Number

MRFX1K80N

Description

RF Power LDMOS Transistors

Manufacture

NXP

Total Page 21 Pages
Datasheet
Download MRFX1K80N Datasheet


MRFX1K80N
NXP Semiconductors
Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR
industrial, medical, broadcast, aerospace and mobile radio applications. Their
unmatched input and output design supports frequency use from 1.8 to
400 MHz.
Typical Performance
Frequency
(MHz)
Signal Type
87.5–108 (1,2)
230 (3)
CW
Pulse
(100 sec, 20% Duty Cycle)
VDD
(V)
Pout
(W)
Gps
(dB)
60 1670 CW 23.8
65 1800 Peak 24.4
D
(%)
83.5
75.7
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
Pin Test
(W)
Voltage
Result
230 (3)
Pulse
> 65:1 at all 14 W Peak 65
No Device
(100 sec, 20% Phase Angles (3 dB
Degradation
Duty Cycle)
Overdrive)
1. Measured in 87.5–108 MHz broadband reference circuit (page 5).
2. The values shown are the center band performance numbers across the indicated
frequency range.
3. Measured in 230 MHz narrowband production test fixture (page 11).
Features
Unmatched input and output allowing wide frequency range utilization
Device can be used single--ended or in a push--pull configuration
Qualified up to a maximum of 65 VDD operation
Characterized from 30 to 65 V for extended power range
Lower thermal resistance package
High breakdown voltage for enhanced reliability
Suitable for linear application with appropriate biasing
Integrated ESD protection with greater negative gate--source voltage range for
improved Class C operation
Included in NXP product longevity program with assured supply for a minimum
of 15 years after launch
Typical Applications
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma generation
– Particle accelerators
– MRI, RF ablation and skin treatment
– Industrial heating, welding and drying systems
Radio and VHF TV broadcast
Aerospace
– HF communications
– Radar
Document Number: MRFX1K80N
Rev. 0, 04/2018
MRFX1K80N
MRFX1K80GN
1.8–400 MHz, 1800 W CW, 65 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
OM--1230--4L
PLASTIC
MRFX1K80N
OM--1230G--4L
PLASTIC
MRFX1K80GN
Gate A 3
Gate B 4
1 Drain A
2 Drain B
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
2018 NXP B.V.
RF Device Data
NXP Semiconductors
MRFX1K80N MRFX1K80GN
1

MRFX1K80N
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range (1,2)
Total Device Dissipation @ TC = 25C
Derate above 25C
Symbol
VDSS
VGS
Tstg
TC
TJ
PD
Value
–0.5, +179
–6.0, +10
– 65 to +150
–40 to +150
–40 to +225
3333
16.7
Unit
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW: Case Temperature 112C, 1800 W CW, 65 Vdc, IDQ(A+B) = 150 mA, 98 MHz
Thermal Impedance, Junction to Case
Pulse: Case Temperature 77C, 1800 W Peak, 100 sec Pulse Width, 20% Duty Cycle,
65 Vdc, IDQ(A+B) = 100 mA, 230 MHz
Table 3. ESD Protection Characteristics
Symbol
RJC
ZJC
Value (2,3)
0.06
0.009
Unit
C/W
C/W
Test Methodology
Human Body Model (per JESD22--A114)
Charge Device Model (per JESD22--C101)
Class
2, passes 2500 V
C3, passes 1200 V
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3 260 C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics (4)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1 Adc
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 mAdc)
V(BR)DSS
179
193
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 179 Vdc, VGS = 0 Vdc)
IDSS
— 100 mAdc
On Characteristics
Gate Threshold Voltage (4)
(VDS = 10 Vdc, ID = 740 Adc)
VGS(th)
2.1
2.5
2.9 Vdc
Gate Quiescent Voltage
VGS(Q)
2.5
2.9
3.3 Vdc
(VDD = 65 Vdc, IDQ(A+B) = 100 mAdc, Measured in Functional Test)
Drain--Source On--Voltage (4)
(VGS = 10 Vdc, ID = 2.76 Adc)
VDS(on)
0.21
Vdc
Forward Transconductance (4)
(VDS = 10 Vdc, ID = 43 Adc)
gfs 44.7 S
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Each side of device measured separately.
(continued)
MRFX1K80N MRFX1K80GN
2
RF Device Data
NXP Semiconductors


Features NXP Semiconductors Technical Data RF Po wer LDMOS Transistors High Ruggedness N --Channel Enhancement--Mode Lateral MOS FETs These high ruggedness devices are designed for use in high VSWR industri al, medical, broadcast, aerospace and m obile radio applications. Their unmatch ed input and output design supports fre quency use from 1.8 to 400 MHz. Typica l Performance Frequency (MHz) Signal Type 87.5–108 (1,2) 230 (3) CW Puls e (100 sec, 20% Duty Cycle) VDD (V) Pout (W) Gps (dB) 60 1670 CW 23.8 65 1800 Peak 24.4 D (%) 83.5 75.7 Load Mismatch/Ruggedness Frequency (M Hz) Signal Type VSWR Pin Test (W) Voltage Result 230 (3) Pulse > 65:1 at all 14 W Peak 65 No Device (100 sec, 20% Phase Angles (3 dB Degradat ion Duty Cycle) Overdrive) 1. Measur ed in 87.5–108 MHz broadband referenc e circuit (page 5). 2. The values shown are the center band performance number s across the indicated frequency range. 3. Measured in 230 MHz narrowband production test fixture (page 11). Fe.
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