BTD2444L3 Transistor Datasheet

BTD2444L3 Datasheet, PDF, Equivalent


Part Number

BTD2444L3

Description

NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 8 Pages
Datasheet
Download BTD2444L3 Datasheet


BTD2444L3
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2444L3
BVCEO
IC
RCESAT
Spec. No. : C223L3
Issued Date : 2011.01.03
Revised Date : 2012.10.03
Page No. : 1/6
20V
1A
0.35Ω(typ.)
Features
The BTD2444L3 is designed for general purpose low frequency power amplifier applications.
Low VCE(sat), VCE(sat)=0.35V (typ), at IC / IB = 1A / 50mA
Complementary to BTB1590L3
Pb-free lead plating and halogen-free package
Symbol
BTD2444L3
Outline
SOT-223
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @TA=25
Power Dissipation @TC=25
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
Tj
Tstg
Note : Single pulse, Pw=10ms
BTD2444L3
Limits
40
25
6
1
3 (Note)
0.2
1
3
-55~+150
-55~+150
Unit
V
V
V
A
A
A
W
°C
°C
CYStek Product Specification

BTD2444L3
CYStech Electronics Corp.
Spec. No. : C223L3
Issued Date : 2011.01.03
Revised Date : 2012.10.03
Page No. : 2/6
Thermal Data
Parameter
Thermal Resistance, Junction-to- ambient, max
Thermal Resistance, Junction-to- case, max
Symbol
Rth,j-a
Rth,j-c
Value
125
41.7
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*RCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
40
25
6
-
-
-
-
-
-
180
60
100
-
Typ.
-
-
-
-
-
0.15
0.35
0.35
-
-
-
-
6
Max.
-
-
-
0.5
0.5
0.3
0.5
0.5
1
390
-
-
-
Unit
V
V
V
μA
μA
V
V
Ω
V
-
-
MHz
pF
Test Conditions
IC=100μA, IE=0
IC=2mA, IB=0
IE=100μA, IC=0
VCB=30V, IE=0
VEB=6V, IC=0
IC=400mA, IB=20mA
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=1V, IC=1A
VCE=1V, IC=100mA
VCE=1V, IC=1A
VCE=5V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
BTD2444L3-0-T3-G
Package
SOT-223
(Pb-free lead plating and halogen-freepackage)
Shipping
2500 pcs / Tape & Reel
BTD2444L3
CYStek Product Specification


Features CYStech Electronics Corp. Low Vcesat NP N Epitaxial Planar Transistor BTD2444L3 BVCEO IC RCESAT Spec. No. : C223L3 I ssued Date : 2011.01.03 Revised Date : 2012.10.03 Page No. : 1/6 20V 1A 0.35Ω (typ.) Features • The BTD2444L3 is d esigned for general purpose low frequen cy power amplifier applications. • Lo w VCE(sat), VCE(sat)=0.35V (typ), at IC / IB = 1A / 50mA • Complementary to BTB1590L3 • Pb-free lead plating and halogen-free package Symbol BTD2444L3 Outline SOT-223 B:Base C:Collecto r E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base V oltage Collector-Emitter Voltage Emitte r-Base Voltage Collector Current (DC) C ollector Current (Pulse) Base Current P ower Dissipation @TA=25℃ Power Dissip ation @TC=25℃ Operating Junction Temp erature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP IB PD Tj Tstg Note : Single pulse, Pw=10ms BT D2444L3 Limits 40 25 6 1 3 (Note) 0.2 1 3 -55~+150 -55~+150 Unit V V V A A A W °C °C CYStek Product Specification CYSt.
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