BTD2498N3 Transistor Datasheet

BTD2498N3 Datasheet, PDF, Equivalent


Part Number

BTD2498N3

Description

High Voltage NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 6 Pages
Datasheet
Download BTD2498N3 Datasheet


BTD2498N3
CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
Built-in Base Resistor
BTD2498N3
Spec. No. : C899N3
Issued Date : 2009.12.23
Revised Date :
Page No. : 1/6
Description
High breakdown voltage. (BVCEO=400V)
Low saturation voltage, typical VCE(sat) =0.13V at Ic/IB =20mA/1mA.
Complementary to BTB1498N3
Pb-free package
Equivalent Circuit
BTD2498N3
Outline
SOT-23
B : Base
C : Collector
E : Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
Limits
400
400
7
300
225
556
150
-55~+150
Unit
V
V
V
mA
mW
°C/W
°C
°C
BTD2498N3
Preliminary
CYStek Product Specification

BTD2498N3
CYStech Electronics Corp.
Spec. No. : C899N3
Issued Date : 2009.12.23
Revised Date :
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICER
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE
*hFE
R
fT
Cob
Min.
400
400
7
-
-
-
-
-
-
-
50
50
0.7
-
-
Typ.
-
-
-
-
-
-
0.13
0.11
0.16
-
-
-
-
100
13
Max.
-
-
-
100
10
100
0.18
0.18
0.3
3.7
270
-
1.3
-
-
Unit
V
V
V
nA
nA
nA
V
V
V
V
-
-
kΩ
MHz
pF
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=400V
VCE=300V, REB=4kΩ
VEB=6V
IC=20mA, IB=1mA
IC=50mA, IB=5mA
IC=100mA, IB=10mA
IC=20mA, IB=2mA
VCE=10V, IC=10mA
VCE=10V, IC=100mA
-
VCE=10V, IC=10mA, f=5MHz
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
BTD2498N3
Package
SOT-23
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Recommended Soldering Footprint
BTD2498N3
Preliminary
CYStek Product Specification


Features CYStech Electronics Corp. High Voltage N PN Epitaxial Planar Transistor Built-in Base Resistor BTD2498N3 Spec. No. : C 899N3 Issued Date : 2009.12.23 Revised Date : Page No. : 1/6 Description • High breakdown voltage. (BVCEO=400V) Low saturation voltage, typical VCE(s at) =0.13V at Ic/IB =20mA/1mA. • Comp lementary to BTB1498N3 • Pb-free pack age Equivalent Circuit BTD2498N3 Outl ine SOT-23 B : Base C : Collector E : Emitter Absolute Maximum Ratings (Ta= 25°C) Parameter Collector-Base Voltag e Collector-Emitter Voltage Emitter-Bas e Voltage Collector Current Total Power Dissipation Thermal Resistance, Juncti on to Ambient Junction Temperature Stor age Temperature Symbol VCBO VCEO VEBO IC Pd RθJA Tj Tstg Limits 400 400 7 3 00 225 556 150 -55~+150 Unit V V V mA mW °C/W °C °C BTD2498N3 Preliminar y CYStek Product Specification CYStec h Electronics Corp. Spec. No. : C899N3 Issued Date : 2009.12.23 Revised Date : Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO I.
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