GS2005ELD Diode Datasheet

GS2005ELD Datasheet, PDF, Equivalent


Part Number

GS2005ELD

Description

Schottky Barrier Diode

Manufacture

GOOD-ARK

Total Page 3 Pages
Datasheet
Download GS2005ELD Datasheet


GS2005ELD
Features
Low Forward Voltage
Forward Current: 0.5A
Reverse Voltage 20V
MSL: Level 1
GS2005ELD
Schottky Barrier Diode
Applications
Ultra High-speed Switching
Voltage Clamping
Protection Circuits
Low Voltage Rectification
High Efficiency DC-to-DC Conversion
Low Power Consumption Applications
SOD-923
Schematic Diagram
Description
Planar Maximum Efficiency General Application (MEGA) schottky barrier diode with an integrated guard ring for
stress protection encapsulated in a SOD-923 small package.
Absolute Maximum Ratings
(TA=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min Max Unit
Continuous Reverse Voltage
Repetitive Peak Forward Current
Continuous Forward Current
Non-repetitive Peak Forward Current
Junction Temperature
Operating Ambient Temperature
Storage Temperature
VRRM
IFRM
IF
IFSM
TJ
TAMB(1)
TSTG(1)
tp1ms , δ≤0.25
t=8ms,square wave
-
-65
-65
20
2.5
0.5
3.0
150
+150
+150
V
A
A
A
°C
°C
°C
Notes:
1. For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR
are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating
will be available on request.
1/3

GS2005ELD
Electrical Characteristics
(TA=25°C unless otherwise specified)
Parameter
Continuous Forward Voltage
Continuous Reverse Current
Diode Capacitance
Pulse test: tp300μs; δ≤0.02
GS2005ELD
Schottky Barrier Diode
Symbol
Condition
Typ Max Unit
IF=0.1mA
125 190 mV
IF=1mA
185 240 mV
VF
IF=10mA
250 310 mV
IF=100mA
325 420 mV
IF=500mA
450 650 mV
VR=5V
1.0 1.8 μA
IR
VR=10V
VR=20V
4 30 μA
10 100 μA
Cd
VR=1V;f=1MHz
24
pF
Typical Characteristic Curves
Fig.1 Forward current as a function of forward
voltage (typical values)
103
Fig.2 Reverse current as a function of reverse
voltage (typical values)
102
102
12)(34
10
1 (1) Tj=150(2) Tj=125
(3) Tj=85(4) Tj=25
10-1
0
0.1 0.2 0.3
VFV
0.4 0.5
Fig.3 Diode capacitance as a function of reverse
Voltage;typical values
45
10
1
10-1
10-2
10-3
0
1
2
3
(1) Tj=150(2) Tj=125
(3) Tj=85(4) Tj=25
4
5 10 15 20
VRV
35
f =1 MHz;
Tamb=25
25
15
0
0
5 VRV10 15 20
2/3


Features Features ■ Low Forward Voltage ■ For ward Current: 0.5A ■ Reverse Voltage 20V ■ MSL: Level 1 GS2005ELD Schottk y Barrier Diode Applications ■ Ultra High-speed Switching ■ Voltage Clamp ing ■ Protection Circuits ■ Low Vol tage Rectification ■ High Efficiency DC-to-DC Conversion ■ Low Power Consu mption Applications SOD-923 Schematic Diagram Description Planar Maximum Eff iciency General Application (MEGA) scho ttky barrier diode with an integrated g uard ring for stress protection encapsu lated in a SOD-923 small package. Abso lute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Condition Min Max Unit Continuous R everse Voltage Repetitive Peak Forward Current Continuous Forward Current Non- repetitive Peak Forward Current Junctio n Temperature Operating Ambient Tempera ture Storage Temperature VRRM IFRM IF IFSM TJ TAMB(1) TSTG(1) tp≤1ms , δ 0.25 t=8ms,square wave -65 -65 20 2 .5 0.5 3.0 150 +150 +150 V A A A °C °C °C Notes: 1. For Schottky barrier diodes thermal.
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