GSBAT54KAW Diode Datasheet

GSBAT54KAW Datasheet, PDF, Equivalent


Part Number

GSBAT54KAW

Description

Schottky Barrier Diode

Manufacture

GOOD-ARK

Total Page 3 Pages
Datasheet
Download GSBAT54KAW Datasheet


GSBAT54KAW
Features
Low forward voltage drop
Fast switching
Schematic Diagram and Marking
GSBAT54KxW
Schottky Barrier Diode
3
1
2
SOT-323
GSBAT54KW
Marking: KL5
GSBAT54KAW
Marking: KL6
GSBAT54KCW
Marking: KL7
GSBAT54KSW
Marking: KL8
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Non-repetitive Peak Forward Surge Current @t=8.3ms
Repetitive Peak Forward Current @ t1s,δ≤0.5
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VRRM
VRWM
VR
IFM
IFSM
IFRM
PD
RΘJA
TJ
TSTG
Value
30
200
600
300
200
500
125
-55 to +150
Unit
V
mA
mA
mA
mW
/W
Electrical Characteristics (TA=25°C unless otherwise specified)
Parameter
Reverse Voltage
Reverse Current
Forward Voltage
Diode Capacitance
Reverse Recovery Time
Symbol
V(BR)
IR
VF
CD
trr
Test conditions
IR=100μA
VR=25V
IF1=0.1mA
IF2=1mA
IF3=10mA
IF4=30mA
IF5=100mA
VR=0V,f=1MHz
IF=IR=10mA
Irr=0.1×IR,RL=100Ω
Min
30
-
-
-
-
-
-
-
-
Max Unit
-V
2 μA
0.24 V
0.32 V
0.40 V
0.50 V
1V
10 pF
5 ns
1/3

GSBAT54KAW
Typical Characteristic Curves
Forward Characteristics
200
100
10
1
0.1
0
200 400 600 800
FORWARD VOLTAGE VF (mV)
GSBAT54KxW
Schottky Barrier Diode
Reverse Characteristics
100
10 Ta=100
1
0.1 Ta=25
0.01
0
5 10 15 20 25
REVERSE VOLTAGE VR (V)
30
Capacitance Characteristics
20
Ta=25
f=1MHz
16
12
8
4
0
0 5 10 15 20
REVERSE VOLTAGE VR (V)
Power Derating Curve
250
200
150
100
50
0
0 25 50 75 100 125
AMBIENT TEMPERATURE Ta ()
2/3


Features Features ■ Low forward voltage drop Fast switching Schematic Diagram and Marking GSBAT54KxW Schottky Barrier Di ode 3 1 2 SOT-323 GSBAT54KW Marking: K L5 GSBAT54KAW Marking: KL6 GSBAT54KCW Marking: KL7 GSBAT54KSW Marking: KL8 Absolute Maximum Ratings (TA=25°C unl ess otherwise specified) Parameter Pea k Repetitive Reverse Voltage Working Pe ak Reverse Voltage DC Blocking Voltage Forward Continuous Current Non-repetiti ve Peak Forward Surge Current @t=8.3ms Repetitive Peak Forward Current @ t≤1 s,δ≤0.5 Power Dissipation Thermal Re sistance from Junction to Ambient Junct ion Temperature Storage Temperature Sy mbol VRRM VRWM VR IFM IFSM IFRM PD RΘJ A TJ TSTG Value 30 200 600 300 200 500 125 -55 to +150 Unit V mA mA mA mW /W ℃ ℃ Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Reverse Voltage Reverse Curr ent Forward Voltage Diode Capacitance R everse Recovery Time Symbol V(BR) IR V F CD trr Test conditions IR=100μA VR=25V IF1=0.1mA IF2=1mA IF3=10mA IF4=30mA IF5.
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