GSBAT54X Diode Datasheet

GSBAT54X Datasheet, PDF, Equivalent


Part Number

GSBAT54X

Description

Schottky Diode

Manufacture

GOOD-ARK

Total Page 3 Pages
Datasheet
Download GSBAT54X Datasheet


GSBAT54X
Features
Low forward voltage drop
Fast switching
PN junction guard ring for transient and ESD protection
GSBAT54X
Schottky Diode
SOD-523
Absolute Maximum Ratings (TA=25°C unless otherwise noted
Parameter
DC Reverse Voltage
Continuous Forward Current
Peak Forward Surge Current
Total Power Dissipation
Total Resistance Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VR
IF
IFSM
Ptot
RθJA
TJ
TSTG
Limits
30
200
600
200
635
150
-55 to +150
Schematic Diagram
Unit
V
mA
mA
mW
/W
Electrical Characteristics (TA=25°C unless otherwise noted
Parameter
Reverse Breakdown Voltage
Symbol Min.
V(BR)R
30
Forward Voltage
VF
Reverse Current
Diode Capacitance
Reverse Recovery Time
IR
Cd
trr
Typ. Max. Unit
V
0.22 0.24
0.41 0.5
0.52 0.8
0.29 0.32
0.35 0.40
0.5 2.0
V
μA
7.6 10 pF
5 ns
Conditions
IR=100μA
IF=0.1mA
IF=30mA
IF=100mA
IF=1.0mA
IF=10mA
VR=25V
VR=1V,f=1MHz
IF=IR=10mA
1/3

GSBAT54X
Typical Electrical Characteristic Curves
GSBAT54X
Schottky Diode
Figure 1. Forward Voltage
Figure 2. Leakage Current
Figure 3. Total Capacitance
2/3


Features Features ■ Low forward voltage drop Fast switching ■ PN junction guard ring for transient and ESD protection GSBAT54X Schottky Diode SOD-523 Absolu te Maximum Ratings (TA=25°C unless oth erwise noted) Parameter DC Reverse V oltage Continuous Forward Current Peak Forward Surge Current Total Power Dissi pation Total Resistance Junction to Amb ient Junction Temperature Storage Tempe rature Symbol VR IF IFSM Ptot RθJA TJ TSTG Limits 30 200 600 200 635 150 -5 5 to +150 Schematic Diagram Unit V mA mA mW ℃/W ℃ ℃ Electrical Charact eristics (TA=25°C unless otherwise not ed) Parameter Reverse Breakdown Volt age Symbol Min. V(BR)R 30 Forward V oltage VF Reverse Current Diode Capac itance Reverse Recovery Time IR Cd trr Typ. Max. Unit V 0.22 0.24 0.41 0.5 0.52 0.8 0.29 0.32 0.35 0.40 0.5 2.0 V μA 7.6 10 pF 5 ns Conditions IR=1 00μA IF=0.1mA IF=30mA IF=100mA IF=1.0m A IF=10mA VR=25V VR=1V,f=1MHz IF=IR=10m A 1/3 Typical Electrical Characteristic Curves GSBAT54X Schottky Diode Figure 1..
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