BLM9D2327-26B MMIC Datasheet

BLM9D2327-26B Datasheet, PDF, Equivalent


Part Number

BLM9D2327-26B

Description

LDMOS 2-stage integrated Doherty MMIC

Manufacture

Ampleon

Total Page 17 Pages
Datasheet
Download BLM9D2327-26B Datasheet


BLM9D2327-26B
BLM9D2327-26B
LDMOS 2-stage integrated Doherty MMIC
Rev. 2 — 1 March 2019
Product data sheet
1. Product profile
1.1 General description
The BLM9D2327-26B is a thermally enhanced 2-stage fully integrated MMIC solution
using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking
device, input splitter and output combiner are integrated in a single package. This
multiband device is perfectly suited as general purpose driver or small cell final in the
frequency range from 2300 MHz to 2700 MHz. Available in PQFN outline.
Table 1. Application performance
Typical RF performance measured in a wideband 2300 MHz to 2700 MHz application board at
Tcase = 25 °C; IDq = 75 mA (carrier); VGSq(peaking) = VGSq(carrier) 0.98 V. Test signal: 1-carrier LTE
20 MHz; PAR = 7.2 dB at 0.01% probability on CCDF.
Test signal
f
VDS
PL(AV)
Gp [1]
ηD [1]
(MHz)
(V) (W) (dB) (%)
single carrier LTE 20 MHz
2500
28 4.9 27.9 41.1
[1] At PL(AV).
1.2 Features and benefits
Integrated input splitter
Integrated output combiner
High efficiency
Designed for broadband operation (frequency 2300 MHz to 2700 MHz)
Independent control of carrier and peaking bias
Integrated ESD protection
Source impedance 50 Ω; high power gain
For RoHS compliance see the product details on the Ampleon website
1.3 Applications
RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base
stations in the 2300 MHz to 2700 MHz frequency range

BLM9D2327-26B
2. Pinning information
2.1 Pinning
BLM9D2327-26B
LDMOS 2-stage integrated Doherty MMIC
pin 1
index
RF_OUT VDS2
n.c.
n.c.
n.c.
n.c.
VDS1
20 19 18 17 16
1 15
2 14
3 13
4 12
5 11
6 7 8 9 10
n.c.
n.c.
n.c.
n.c.
VDS1
amp00274
Fig 1.
Transparent top view
The exposed backside of the package is the ground terminal of the device.
Pin configuration
2.2 Pin description
Table 2. Pin description
Symbol
Pin
n.c. 1
n.c. 2
n.c. 3
n.c. 4
VDS1
VGS(peak)
VGS(carr)
RF_IN
5
6
7
8
VGS(carr)
VGS(peak)
VDS1
n.c.
9
10
11
12
n.c. 13
n.c. 14
n.c. 15
RF_OUT/VDS2
RF_OUT/VDS2
RF_OUT/VDS2
16
17
18
Description
not connected
not connected
not connected
not connected
drain-source voltage of driver stages
gate-source voltage of peaking
gate-source voltage of carrier
RF input
gate-source voltage of carrier
gate-source voltage of peaking
drain-source voltage of driver stages
not connected
not connected
not connected
not connected
RF output / drain-source voltage of final stages
RF output / drain-source voltage of final stages
RF output / drain-source voltage of final stages
BLM9D2327-26B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 March 2019
© Ampleon Netherlands B.V. 2019. All rights reserved.
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Features BLM9D2327-26B LDMOS 2-stage integrated D oherty MMIC Rev. 2 — 1 March 2019 Pr oduct data sheet 1. Product profile 1 .1 General description The BLM9D2327-26 B is a thermally enhanced 2-stage fully integrated MMIC solution using Ampleon 's state of the art GEN9 LDMOS technolo gy. The carrier and peaking device, inp ut splitter and output combiner are int egrated in a single package. This multi band device is perfectly suited as gene ral purpose driver or small cell final in the frequency range from 2300 MHz to 2700 MHz. Available in PQFN outline. Table 1. Application performance Typica l RF performance measured in a wideband 2300 MHz to 2700 MHz application board at Tcase = 25 °C; IDq = 75 mA (carrie r); VGSq(peaking) = VGSq(carrier) − 0 .98 V. Test signal: 1-carrier LTE 20 MH z; PAR = 7.2 dB at 0.01% probability on CCDF. Test signal f VDS PL(AV) Gp [1] ηD [1] (MHz) (V) (W) (dB) (%) single carrier LTE 20 MHz 2500 28 4. 9 27.9 41.1 [1] At PL(AV). 1.2 Features and benefits  Integrated i.
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