BLC2425M10LS250 transistor Datasheet

BLC2425M10LS250 Datasheet, PDF, Equivalent


Part Number

BLC2425M10LS250

Description

Power LDMOS transistor

Manufacture

Ampleon

Total Page 11 Pages
Datasheet
Download BLC2425M10LS250 Datasheet


BLC2425M10LS250
BLC2425M10LS250
Power LDMOS transistor
Rev. 3 — 19 April 2019
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS-based power transistor suitable for use in a variety of commercial and
consumer cooking, industrial, scientific and medical applications at frequencies from
2400 MHz to 2500 MHz.
The BLC2425M10LS250 is designed for high-power CW applications and is assembled in
a high performance plastic package.
Table 1. Typical performance
RF performance at VDS = 32 V; IDq = 100 mA; Tcase = 25 °C in a class-AB application circuit.
Test signal
f
VDS
PL(AV)
Gp
ηD
(MHz)
(V) (W)
(dB)
(%)
CW
2450
32 260
15.2 68.5
CW pulsed [1]
2450
32 260
15.3 68.8
[1] tp = 100 μs; δ = 10 %.
1.2 Features and benefits
High efficiency
Excellent ruggedness
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
Internally input and output matched
For RoHS compliance see the product details on the Ampleon website
1.3 Applications
RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency
range such as commercial and consumer cooking, industrial, scientific and medical
applications

BLC2425M10LS250
BLC2425M10LS250
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
flange
Pinning
Description
drain
gate
source
Simplified outline Graphic symbol
11
2
3
sym112
2
3. Ordering information
Table 3. Ordering information
Type number
Package
Name Description
BLC2425M10LS250 -
air cavity plastic earless flanged package; 2 leads
Version
SOT1270-1
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
Tstg storage temperature
Tj junction temperature
Min
-
6
65
[1] -
Max
65
+13
+150
225
Unit
V
V
°C
°C
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Rth(j-case) thermal resistance from junction to case
Conditions
Tcase = 80 °C; PL = 250 W
Typ Unit
0.33 K/W
BLC2425M10LS250
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 19 April 2019
© Ampleon Netherlands B.V. 2019. All rights reserved.
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Features BLC2425M10LS250 Power LDMOS transistor R ev. 3 — 19 April 2019 Product data s heet 1. Product profile 1.1 General d escription 250 W LDMOS-based power tran sistor suitable for use in a variety of commercial and consumer cooking, indus trial, scientific and medical applicati ons at frequencies from 2400 MHz to 250 0 MHz. The BLC2425M10LS250 is designed for high-power CW applications and is a ssembled in a high performance plastic package. Table 1. Typical performance RF performance at VDS = 32 V; IDq = 10 0 mA; Tcase = 25 °C in a class-AB appl ication circuit. Test signal f VDS PL(AV) Gp ηD (MHz) (V) (W) (dB) (%) CW 2450 32 260 15.2 68.5 CW pu lsed [1] 2450 32 260 15.3 68.8 [1] tp = 100 μs; δ = 10 %. 1.2 Features and benefits  High efficiency  Ex cellent ruggedness  Integrated ESD p rotection  Designed for broadband op eration (2400 MHz to 2500 MHz)  Inte rnally input and output matched  For RoHS compliance see the product details on the Ampleon website 1.3 Applications.
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