BLM10D3438-35AB MMIC Datasheet

BLM10D3438-35AB Datasheet, PDF, Equivalent


Part Number

BLM10D3438-35AB

Description

LDMOS 3-stage integrated Doherty MMIC

Manufacture

Ampleon

Total Page 13 Pages
Datasheet
Download BLM10D3438-35AB Datasheet


BLM10D3438-35AB
BLM10D3438-35AB
LDMOS 3-stage integrated Doherty MMIC
Rev. 1 — 30 July 2019
Product data sheet
1. Product profile
1.1 General description
The BLM10D3438-35AB is a 3-stage fully integrated asymmetrical Doherty MMIC solution
using Ampleon’s state of the art LDMOS technology. The carrier and peaking device, input
splitter, output combiner and pre-match are integrated in a single package. This multiband
device is perfectly suited as a final stage for small cells and massive MIMO applications in
the frequency range from 3400 MHz to 3800 MHz. Available in PQFN outline.
Table 1. Application performance
Typical RF performance at Tcase = 25 C; IDq = 41 mA (carrier); VGSq(peaking) = VGSq(carrier) 0.5 V.
Test signal: 1-carrier LTE 20 MHz; PAR = 7.6 dB.
Test signal
f
(MHz)
VDS
PL(AV)
Gp
D
(V) (W) (dB) (%)
single carrier LTE
3600
26 5 33 41
1.2 Features and benefits
Integrated input splitter
Integrated output combiner
30 output impedance thanks to integrated pre-match
Very high efficiency thanks to asymmetry
Designed for wideband operation (frequency 3400 MHz to 3800 MHz)
Independent control of carrier and peaking bias
Integrated ESD protection
Source impedance 50 ; high power gain
For RoHS compliance see the product details on the Ampleon website
1.3 Applications
RF power MMIC for multi-carrier and multi-standard 5G base stations in the 3400 MHz
to 3800 MHz frequency range

BLM10D3438-35AB
2. Pinning information
2.1 Pinning
BLM10D3438-35AB
LDMOS 3-stage integrated Doherty MMIC
pin 1
index
RF_OUT
VDS2
n.c.
n.c.
VGS(carr)
VGS(peak)
20 19 18 17 16
1 15
2 14
3 13
4 12
5 11
6 7 8 9 10
VDS2
n.c.
n.c.
VGS(carr)
VGS(peak)
Fig 1.
amp00887
Transparent top view
The exposed backside of the package is the ground terminal of the device.
Pin configuration
2.2 Pin description
Table 2.
Symbol
VDS2
n.c.
n.c.
VGS(carr)
VGS(peak)
VDS1
GND
RF_IN
GND
VDS1
VGS(peak)
VGS(carr)
n.c.
n.c.
VDS2
RF_OUT
RF_OUT
RF_OUT
RF_OUT
RF_OUT
GND
Pin description
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
flange
Description
drain-source voltage of final stages
not connected
not connected
gate-source voltage of carrier
gate-source voltage of peaking
drain-source voltage of driver stages
RF ground
RF input
RF ground
drain-source voltage of driver stages
gate-source voltage of peaking
gate-source voltage of carrier
not connected
not connected
drain-source voltage of final stages
RF output
RF output
RF output
RF output
RF output
RF ground
BLM10D3438-35AB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 30 July 2019
© Ampleon Netherlands B.V. 2019. All rights reserved.
2 of 13


Features BLM10D3438-35AB LDMOS 3-stage integrated Doherty MMIC Rev. 1 — 30 July 2019 Product data sheet 1. Product profile 1.1 General description The BLM10D3438 -35AB is a 3-stage fully integrated asy mmetrical Doherty MMIC solution using A mpleon’s state of the art LDMOS techn ology. The carrier and peaking device, input splitter, output combiner and pre -match are integrated in a single packa ge. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the f requency range from 3400 MHz to 3800 MH z. Available in PQFN outline. Table 1. Application performance Typical RF per formance at Tcase = 25 C; IDq = 41 m A (carrier); VGSq(peaking) = VGSq(carri er)  0.5 V. Test signal: 1-carrier L TE 20 MHz; PAR = 7.6 dB. Test signal f (MHz) VDS PL(AV) Gp D (V) (W) (dB) (%) single carrier LTE 3600 26 5 33 41 1.2 Features and benefits  Integrated input splitter  Integrat ed output combiner  30  output impedance thanks to integrated pre-match  V.
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