BLP05H6200XR transistor Datasheet

BLP05H6200XR Datasheet, PDF, Equivalent


Part Number

BLP05H6200XR

Description

Power LDMOS transistor

Manufacture

Ampleon

Total Page 9 Pages
Datasheet
Download BLP05H6200XR Datasheet


BLP05H6200XR
BLP05H6200XR
Power LDMOS transistor
Rev. 2 — 1 September 2015
Objective data sheet
1. Product profile
1.1 General description
A 200 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
VDS
PL
(V) (W)
50 200
Gp
(dB)
28
D
(%)
75
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications

BLP05H6200XR
BLP05H6200XR
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
gate 2
gate 1
drain 1
drain 2
source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
43
4
pin 1 index
[1]
12
1
5
2
3
aaa-003574
Table 3. Ordering information
Type number Package
Name Description
BLP05H6200XR HSOP4F plastic, heatsink small outline package; 4 leads(flat)
Version
SOT1223-2
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
Tstg storage temperature
Tj junction temperature
Min
-
6
65
[1] -
Max
135
+11
+150
225
Unit
V
V
C
C
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5.
Symbol
Rth(j-c)
Zth(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
transient thermal impedance from junction
to case
Conditions
Tj = 115 C
Tj = 150 C; tp = 100 s;
= 20 %
Typ
[1][2] <tbd>
[3] <tbd>
Unit
K/W
K/W
[1] Tj is the junction temperature.
[2] Rth(j-c) is measured under RF conditions.
[3] See <tbd>.
BLP05H6200XR#2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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Features BLP05H6200XR Power LDMOS transistor Rev. 2 — 1 September 2015 Objective data sheet 1. Product profile 1.1 General description A 200 W extremely rugged L DMOS power transistor for broadcast and industrial applications in the HF to 6 00 MHz band. Table 1. Application info rmation Test signal f (MHz) pulsed RF 108 VDS PL (V) (W) 50 200 Gp ( dB) 28 D (%) 75 1.2 Features and b enefits  Easy power control  Inte grated ESD protection  Excellent rug gedness  High efficiency  Excelle nt thermal stability  Designed for b roadband operation (HF to 600 MHz)  Compliant to Directive 2002/95/EC, rega rding Restriction of Hazardous Substanc es (RoHS) 1.3 Applications  Industr ial, scientific and medical application s  Broadcast transmitter application s BLP05H6200XR Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description gate 2 ga te 1 drain 1 drain 2 source [1] Connec ted to flange. 3. Ordering information Simplified outline Graphic symbol 43 4 pin.
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