FGH40N60SFDTU-F085 IGBT Datasheet

FGH40N60SFDTU-F085 Datasheet, PDF, Equivalent


Part Number

FGH40N60SFDTU-F085

Description

40A Field Stop IGBT

Manufacture

ON Semiconductor

Total Page 9 Pages
Datasheet
Download FGH40N60SFDTU-F085 Datasheet


FGH40N60SFDTU-F085
FGH40N60SFDTU-F085
600 V, 40 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
• Qualified to Automotive Requirements of AEC-Q101
Applications
• Automotive chargers, Converters, High Voltage Auxiliaries
• Inverters, PFC, UPS
E
C
G
General Description
Using Novel Field Stop IGBT Technology, ON Semiconductor’s
new series of Field Stop IGBTs offer the optimum performance
for Automo-tive Chargers, Inverter, and other applications
where low con-duction and switching losses are essential.
C
COLLECTOR
(FLANGE)
G
E
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate-to-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
600
20
30
80
40
120
290
116
-55 to +150
-55 to +150
300
Typ.
0.43
1.45
40
Unit
V
V
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
oC/W
©2015 Semiconductor Components Industries, LLC.
August-2017,Rev.2
Publication Order Number:
FGH40N60SFDTU-F085/D

FGH40N60SFDTU-F085
Package Marking and Ordering Information
Part Number
Top Mark Package Packing Method Reel Size Tape Width
FGH40N60SFDTU-F085 FGH40N60SFD TO-247
Tube
N/A N/A
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 A
VGE = 0 V, IC = 250 A
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250 A, VCE = VGE
IC = 40 A, VGE = 15 V
TICC==4102A5,oVCGE = 15 V,
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400 V, IC = 40 A,
RG = 10 , VGE
Inductive Load,
= 15
TC =
V,
25oC
VCC = 400 V, IC = 40 A,
RG = 10 , VGE
Inductive Load,
= 15
TC =
V,
125oC
VCE = 400 V, IC = 40 A,
VGE = 15 V
600 - - V
- 0.6 - V/oC
- - 250 A
-
-
±400
nA
4.0 4.7 6.5
- 2.3 2.9
- 2.5 -
V
V
V
- 1920 -
- 190 -
- 65 -
pF
pF
pF
- 21 - ns
- 35 - ns
- 138 -
ns
-
18 54
ns
- 1.23 -
mJ
- 0.38 -
mJ
- 1.61 -
mJ
- 21 - ns
- 39 - ns
- 144 -
ns
- 48 - ns
- 1.58 -
mJ
- 0.58 -
mJ
- 2.16 -
mJ
- 121 -
nC
- 16 - nC
- 68 - nC
www.onsemi.com
2


Features FGH40N60SFDTU-F085 — 600 V, 40 A Field Stop IGBT FGH40N60SFDTU-F085 600 V, 4 0 A Field Stop IGBT Features • High C urrent Capability • Low Saturation Vo ltage: VCE(sat) = 2.3 V @ IC = 40 A • High Input Impedance • Fast Switchin g • RoHS Compliant • Qualified to A utomotive Requirements of AEC-Q101 Appl ications • Automotive chargers, Conve rters, High Voltage Auxiliaries • Inv erters, PFC, UPS E C G General Descrip tion Using Novel Field Stop IGBT Techno logy, ON Semiconductor’s new series o f Field Stop IGBTs offer the optimum pe rformance for Automo-tive Chargers, Inv erter, and other applications where low con-duction and switching losses are e ssential. C COLLECTOR (FLANGE) G E A bsolute Maximum Ratings Symbol VCES VG ES IC ICM (1) PD TJ Tstg TL Descriptio n Collector to Emitter Voltage Gate t o Emitter Voltage Transient Gate-to-Em itter Voltage Collector Current Collect or Current Pulsed Collector Current Max imum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ .
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