BTD5213J3 Transistor Datasheet

BTD5213J3 Datasheet, PDF, Equivalent


Part Number

BTD5213J3

Description

General Purpose NPN Epitaxial Planar Transistor

Manufacture

Cystech

Total Page 7 Pages
Datasheet
Download BTD5213J3 Datasheet


BTD5213J3
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD5213J3
Spec. No. : C304J3
Issued Date : 2010.12.06
Revised Date : 2015.04.30
Page No. : 1/7
Features
Low collector saturation voltage
High breakdown voltage, VCEO=100V (min.)
High collector current, IC(max)=1A (DC)
Pb-free lead plating and halogen-free package
Symbol
BTD5213J3
Outline
TO-252(DPAK)
BBase
CCollector
EEmitter
B CE
Ordering Information
Device
BTD5213J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3:2500 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BTD5213J3
CYStek Product Specification

BTD5213J3
CYStech Electronics Corp.
Spec. No. : C304J3
Issued Date : 2010.12.06
Revised Date : 2015.04.30
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25°C
Power Dissipation @ TC=25°C
Operating Junction and Storage Temperature Range
Note : Pulse test, PW 10ms, Duty 50%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
Tj ; Tstg
Limits
120
100
5
1
2 (Note)
1
10
-55~+150
Unit
V
V
V
A
A
W
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
12.5
125
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(SAT)
*hFE
fT
Cob
Min.
120
100
5
-
-
-
160
-
-
Typ.
-
-
-
-
-
0.15
-
100
20
Max.
-
-
-
100
100
0.4
400
-
-
Unit
V
V
V
nA
nA
V
-
MHz
pF
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=120V, IE=0
VEB=5V, IC=0
IC=500mA, IB=20mA
VCE=5V, IC=100mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
BTD5213J3
CYStek Product Specification


Features CYStech Electronics Corp. General Purpos e NPN Epitaxial Planar Transistor BTD52 13J3 Spec. No. : C304J3 Issued Date : 2010.12.06 Revised Date : 2015.04.30 Pa ge No. : 1/7 Features • Low collecto r saturation voltage • High breakdown voltage, VCEO=100V (min.) • High col lector current, IC(max)=1A (DC) • Pb- free lead plating and halogen-free pack age Symbol BTD5213J3 Outline TO-252( DPAK) B:Base C:Collector E:Emitt er B CE Ordering Information Device BTD5213J3-0-T3-G Package TO-252 (Pb-fr ee lead plating and halogen-free packag e) Shipping 2500 pcs / Tape & Reel En vironment friendly grade : S for RoHS c ompliant products, G for RoHS compliant and green compound products Packing s pec, T3:2500 pcs/tape & reel, 13” ree l Product rank, zero for no rank produ cts Product name BTD5213J3 CYStek Pr oduct Specification CYStech Electronic s Corp. Spec. No. : C304J3 Issued Date : 2010.12.06 Revised Date : 2015.04.30 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Vo.
Keywords BTD5213J3, datasheet, pdf, Cystech, General, Purpose, NPN, Epitaxial, Planar, Transistor, TD5213J3, D5213J3, 5213J3, BTD5213J, BTD5213, BTD521, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)