BTD882NUJ3 Transistor Datasheet

BTD882NUJ3 Datasheet, PDF, Equivalent


Part Number

BTD882NUJ3

Description

Low Vcesat NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 7 Pages
Datasheet
Download BTD882NUJ3 Datasheet


BTD882NUJ3
CYStech Electronics Corp.
BTD882NUJ3Low Vcesat NPN Epitaxial Planar Transistor
BVCEO
IC
Spec. No. : C630T3
Issued Date : 2017.10.06
Revised Date :
Page No. : 1/7
30V
3A
Features
Low VCE(sat), 0.2V typ. at IC / IB = 2A / 0.2A
Excellent current gain characteristics
Complementary to BTB772NUJ3
Pb-free lead plating and halogen-free package
Symbol
BTD882NUJ3
Outline
TO-252(DPAK)
BBase
CCollector
EEmitter
BCE
Ordering Information
Device
BTD882NUJ3-P-T3-G
Package
TO-252
(Pb-free lead plating package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3: 2500 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BTD882NUJ3
CYStek Product Specification

BTD882NUJ3
CYStech Electronics Corp.
Spec. No. : C630T3
Issued Date : 2017.10.06
Revised Date :
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Power Dissipation
Ta=25
Tc=25
Operating Junction and Storage Temperature Range
Note : *1. Single Pulse Pw350μs,Duty2%.
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj ; Tstg
Limit
40
30
9
3
7 *1
1
10
-55~+150
Unit
V
V
V
A
A
W
°C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient, max
Thermal Resistance, Junction-to-Case, max
Symbol
RθJA
RθJC
Limit
125
12.5
Unit
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
fT
Cob
Min.
40
30
9
-
-
-
-
100
160
-
-
Typ.
-
-
-
-
-
0.2
1
-
-
90
17
Max.
-
-
-
100
100
0.5
1.5
-
320
-
-
Unit
V
V
V
nA
nA
V
V
-
-
MHz
pF
Test Conditions
IC=50μA, IE=0
IC=1mA, IB=0
IE=50μA, IC=0
VCB=40V, IE=0
VEB=6V, IC=0
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Classification Of hFE 2
Rank
Range
P
160~320
BTD882NUJ3
CYStek Product Specification


Features CYStech Electronics Corp. BTD882NUJ3Low Vcesat NPN Epitaxial Planar Transistor BVCEO IC Spec. No. : C630T3 Issued D ate : 2017.10.06 Revised Date : Page No . : 1/7 30V 3A Features • Low VCE(sa t), 0.2V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristic s • Complementary to BTB772NUJ3 • P b-free lead plating and halogen-free pa ckage Symbol BTD882NUJ3 Outline TO-252 (DPAK) B:Base C:Collector E:Emit ter BCE Ordering Information Device B TD882NUJ3-P-T3-G Package TO-252 (Pb-fr ee lead plating package) Shipping 2500 pcs / tape & reel Environment friendl y grade : S for RoHS compliant products , G for RoHS compliant and green compou nd products Packing spec, T3: 2500 pcs/ tape & reel, 13” reel Product rank, z ero for no rank products Product name BTD882NUJ3 CYStek Product Specificatio n CYStech Electronics Corp. Spec. No. : C630T3 Issued Date : 2017.10.06 Revi sed Date : Page No. : 2/7 Absolute Max imum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Vo.
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