SiHW30N60E MOSFET Datasheet

SiHW30N60E Datasheet, PDF, Equivalent


Part Number

SiHW30N60E

Description

Power MOSFET

Manufacture

Vishay

Total Page 8 Pages
Datasheet
Download SiHW30N60E Datasheet


SiHW30N60E
www.vishay.com
SiHW30N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. at 25 °C (Ω)
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
130
15
39
Single
0.125
TO-247AD
D
G
D
S
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
- LED lighting
• Industrial
- Welding
- Induction heating
- Motor drives
• Battery chargers
• Renewable energy
- Solar (PV inverters)
TO-247AD
SiHW30N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dtd
VDS = 0 V to 80 % VDS
EAS
PD
TJ, Tstg
dV/dt
Soldering Recommendations (Peak Temperature)c
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 7 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT
600
± 20
30
29
18
65
2
690
250
-55 to +150
70
18
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S14-1277- Rev. C, 23-Jun-14
1
Document Number: 91525
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiHW30N60E
www.vishay.com
SiHW30N60E
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
62
0.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductancea
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Relatedb
Effective Output Capacitance, Time
Relatedc
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
RDS(on)
gfs
Ciss
Coss
Crss
Co(er)
Co(tr)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
IS
Pulsed Diode Forward Current
ISM
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 250 μA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 600 V, VGS = 0 V
VDS = 600 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 15 A
VDS = 8 V, ID = 3 A
600 -
- 0.64
2.0 2.8
--
--
--
- 0.104
- 5.4
VGS = 0 V,
VDS = 100 V,
f = 1.0 MHz
- 2600
- 138
-3
VDS = 0 V to 480 V, VGS = 0 V
- 98
- 346
- 85
VGS = 10 V
ID = 15 A, VDS = 480 V
-
-
15
39
- 19
VDD = 380 V, ID = 15 A,
VGS = 10 V, Rg = 4.7 Ω
- 32
- 63
- 36
f = 1 MHz, open drain
- 0.63
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
--
--
Diode Forward Voltage
VSD
TJ = 25 °C, IS = 15 A, VGS = 0 V
--
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
trr
Qrr
IRRM
TJ = 25 °C, IF = IS = 15 A,
dI/dt = 100 A/μs, VR = 20 V
- 402
-7
- 32
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
c. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
MAX.
-
-
4.0
± 100
1
100
0.125
-
-
-
-
-
-
130
-
-
40
65
95
75
-
29
65
1.3
605
15
65
UNIT
V
V/°C
V
nA
μA
Ω
S
pF
nC
ns
Ω
A
V
ns
μC
A
S14-1277- Rev. C, 23-Jun-14
2
Document Number: 91525
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com SiHW30N60E Vishay Silico nix E Series Power MOSFET PRODUCT SUM MARY VDS (V) at TJ max. RDS(on) max. a t 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 130 15 39 Single 0.125 TO-247AD D G D S G S N-Channel MOSFET ORDERING INFOR MATION Package Lead (Pb)-free and Halog en-free FEATURES • Low figure-of-mer it (FOM) Ron x Qg • Low input capacit ance (Ciss) • Reduced switching and c onduction losses • Ultra low gate cha rge (Qg) • Avalanche energy rated (UI S) • Material categorization: for def initions of compliance please see www.v ishay.com/doc?99912 APPLICATIONS • Se rver and telecom power supplies • Swi tch mode power supplies (SMPS) • Powe r factor correction power supplies (PFC ) • Lighting - High-intensity dischar ge (HID) - Fluorescent ballast lighting - LED lighting • Industrial - Weldin g - Induction heating - Motor drives Battery chargers • Renewable energy - Solar (PV inverters) TO-247AD SiHW30N60E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unle.
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