SiHP30N60AEL MOSFET Datasheet

SiHP30N60AEL Datasheet, PDF, Equivalent


Part Number

SiHP30N60AEL

Description

Power MOSFET

Manufacture

Vishay

Total Page 7 Pages
Datasheet
Download SiHP30N60AEL Datasheet


SiHP30N60AEL
www.vishay.com
SiHP30N60AEL
Vishay Siliconix
EL Series Power MOSFET
TO-220AB
D
S
D
G
G
S
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) typ. () at 25 °C
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
120
14
19
Single
0.105
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
TO-220AB
SiHP30N60AEL-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current a
Linear derating factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single pulse avalanche energy b
Maximum power dissipation
Operating junction and storage temperature range
Reverse diode dv/dt d
EAS
PD
TJ, Tstg
dv/dt
Soldering recommendations (peak temperature) c
For 10 s
Notes
• Initial samples marked as SiHP30N60BE
a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5 A
c. 1.6 mm from case
d. ISD ID, di/dt = 100 A/μs, starting TJ = 25 °C
LIMIT
600
± 30
28
18
68
2
353
250
-55 to +150
32
260
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S18-0173-Rev. A, 12-Feb-18
1
Document Number: 92041
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiHP30N60AEL
www.vishay.com
SiHP30N60AEL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum junction-to-ambient
Maximum junction-to-case (drain)
RthJA
RthJC
TYP.
-
-
MAX.
62
0.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
VDS temperature coefficient
Gate-source threshold Voltage (N)
VDS
VDS/TJ
VGS(th)
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance
Forward transconductance
IGSS
IDSS
RDS(on)
gfs
VGS = ± 20 V
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 15 A
VDS = 20 V, ID = 15 A
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy
related a
Effective output capacitance, time
related b
Ciss
Coss
Crss
Co(er)
Co(tr)
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate input resistance
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 10 V
ID = 15 A, VDS = 480 V
VDD = 480 V, ID = 15 A,
VGS = 10 V, Rg = 9.1
f = 1 MHz, open drain
Continuous source-drain diode current
Pulsed diode forward current
IS
MOSFET symbol
showing the
D
integral reverse
G
ISM p - n junction diode
S
MIN. TYP. MAX. UNIT
600 -
-V
- 0.68 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - ± 1 μA
- -1
μA
- - 10
- 0.105 0.120
- 19 - S
- 2565 -
- 109 -
- 6-
- 71 -
- 367 -
- 60 120
- 14 -
- 19 -
- 26 52
- 24 48
- 79 158
- 33 66
0.35 0.72 1.45
pF
nC
ns
- - 26
A
- - 68
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VSD
trr
Qrr
IRRM
TJ = 25 °C, IS = 15 A, VGS = 0 V
TJ = 25 °C, IF = IS = 15 A,
di/dt = 100 A/μs, VR = 400 V
--
- 335
- 5.4
- 30
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS
1.2
670
10.8
-
V
ns
μC
A
S18-0173-Rev. A, 12-Feb-18
2
Document Number: 92041
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com SiHP30N60AEL Vishay Sili conix EL Series Power MOSFET TO-220AB D S D G G S N-Channel MOSFET PRODU CT SUMMARY VDS (V) at TJ max. RDS(on) t yp. () at 25 °C Qg max. (nC) Qgs (n C) Qgd (nC) Configuration 650 VGS = 10 V 120 14 19 Single 0.105 FEATURES Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) • Redu ced switching and conduction losses • Ultra low gate charge (Qg) • Avalanc he energy rated (UIS) • Material cate gorization: for definitions of complian ce please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom pow er supplies • Switch mode power suppl ies (SMPS) • Power factor correction power supplies (PFC) • Lighting - Hig h-intensity discharge (HID) - Fluoresce nt ballast lighting • Industrial - We lding - Induction heating - Motor drive s - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFOR MATION Package Lead (Pb)-free and halog en-free TO-220AB SiHP30N60AEL-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwi.
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