SiHB12N60E MOSFET Datasheet

SiHB12N60E Datasheet, PDF, Equivalent


Part Number

SiHB12N60E

Description

Power MOSFET

Manufacture

Vishay

Total Page 9 Pages
Datasheet
Download SiHB12N60E Datasheet


SiHB12N60E
www.vishay.com
SiHB12N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. at 25 °C (Ω)
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
58
6
13
Single
0.38
D2PAK (TO-263)
D
G
GD
S
S
N-Channel MOSFET
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
D2PAK (TO-263)
SiHB12N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current a
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt d
TJ = 125 °C
EAS
PD
TJ, Tstg
dV/dt
Soldering Recommendations (Peak Temperature) c
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 11.6 mH, Rg = 25 Ω, IAS = 4.5 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT
600
± 30
12
7.8
27
1.2
117
147
-55 to +150
70
5
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S15-0291-Rev. C, 23-Feb-15
1
Document Number: 91486
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiHB12N60E
www.vishay.com
SiHB12N60E
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
62
0.85
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Related a
Effective Output Capacitance, Time
Related b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
RDS(on)
gfs
Ciss
Coss
Crss
Co(er)
Co(tr)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 6 A
VDS = 40 V, ID = 8 A
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VGS = 10 V
ID = 6 A, VDS = 480 V
VDD = 480 V, ID = 6 A,
VGS = 10 V, Rg = 9.1 Ω
f = 1 MHz, open drain
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
D
Pulsed Diode Forward Current
integral reverse
G
ISM p - n junction diode
S
MIN. TYP.
600 -
- 0.71
2-
--
--
--
--
- 0.32
- 3.8
- 937
- 53
-5
- 41
- 136
- 29
-6
- 13
- 14
- 19
- 35
- 19
- 1.1
--
--
Diode Forward Voltage
VSD
TJ = 25 °C, IS = 6 A, VGS = 0 V
--
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
trr
Qrr
IRRM
TJ = 25 °C, IF = IS = 6 A,
dI/dt = 100 A/μs, VR = 25 V
- 350
-4
- 19
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
MAX. UNIT
-
-
4
± 100
±1
1
10
0.38
-
V
V/°C
V
nA
μA
μA
Ω
S
-
-
-
pF
-
-
58
- nC
-
28
38
ns
70
38
-Ω
12
A
48
1.2 V
- ns
- μC
-A
S15-0291-Rev. C, 23-Feb-15
2
Document Number: 91486
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com SiHB12N60E Vishay Silico nix E Series Power MOSFET PRODUCT SUM MARY VDS (V) at TJ max. RDS(on) max. a t 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 58 6 13 Single 0.38 D2PAK (TO-263) D G GD S S N-Channel MOSFET FEATURES Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) • Redu ced switching and conduction losses • Ultra low gate charge (Qg) • Avalanc he energy rated (UIS) • Material cate gorization: for definitions of complian ce please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom pow er supplies • Switch mode power suppl ies (SMPS) • Power factor correction power supplies (PFC) • Lighting - Hig h-intensity discharge (HID) - Fluoresce nt ballast lighting • Industrial - We lding - Induction heating - Motor drive s - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFOR MATION Package Lead (Pb)-free and Halog en-free D2PAK (TO-263) SiHB12N60E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless ot.
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