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SiHB12N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
58 6 13 Single
0.38
D2PAK (TO-263)
D
G
GD S
S N-Channel MOSFET
FEATURES Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching an...
