2N7002KDWS MOSFET Datasheet

2N7002KDWS Datasheet, PDF, Equivalent


Part Number

2N7002KDWS

Description

Enhancement Mode MOSFET

Manufacture

TAITRON

Total Page 8 Pages
Datasheet
Download 2N7002KDWS Datasheet


2N7002KDWS
Enhancement Mode
MOSFET (Double N-Channel)
2N7002KDWS
Enhancement Mode MOSFET (Double N-Channel)
Features
Advanced Trench Process Technology
High density cell design for low RDS(ON)
Very low leakage current in off condition
ESD Protected 2000V HBM
RoHS Compliance
SOT-363
Mechanical Data
Case:
Terminals:
Weight:
SOT-363, Plastic Package
Solderable per MIL-STD-750, Method 2026
0.006 gram
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
2N7002KDWS
VDSS
VGSS
ID
IDP
PD
TJ
TSTG
ESD
Drain-Source Voltage
Gate-Source Voltage
Drain Current Continuous
Drain Current Pulsed
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
Gate-Source ESD Rating
TA=25°C
TA=75°C
60
±20
115
800
200
120
+150
-55 to +150
2000
Unit
V
V
mA
mA
mW
mW
°C
°C
V
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Rev. A/CW
Page 1 of 8

2N7002KDWS
Enhancement Mode MOSFET (Double N-Channel)
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Off Characteristics
2N7002KDWS
Symbol
V(BR)DSS
IDSS
IGSS
Description
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On Characteristics (Note3)
Min.
60
-
-
Typ.
-
-
-
Max.
-
1
±10
Unit
V
uA
μA
Conditions
VGS=0V, ID=10µA
VDS=60V, VGS=0V
VGS=±20V, VDS=0V
Symbol
VGS(th)
Description
Gate Threshold Voltage
RDS(ON) Drain-Source ON Resistance
gFS Forward Transconductance
Dynamic Characteristics
Min.
1.0
-
-
100
Typ.
-
-
-
-
Max.
2.5
3.0
4.0
-
Unit
V
Ω
mS
Conditions
VDS=VGS, ID=250μA
VGS=10V, ID=500mA
VGS=4.5V, ID=200mA
VDS=15V, ID=250mA
Symbol
Ciss
Crss
Coss
Description
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Characteristics
Min.
-
-
-
Typ.
-
-
-
Max.
35
5
10
Unit
pF
Conditions
VDS=25V, VGS=0V,
f=1MHz
Symbol
ton
toff
Description
Turn-On Time
Turn-Off Time
Min.
-
-
Typ.
-
-
Max.
20
40
Unit
nS
Conditions
VDD=30V, RL=150Ω
ID=200mA,
VGEN=10V
RG=10 Ω
Drain-Source Diode Ratings and Maximum Ratings
Symbol
VSD
Description
Source-Drain Forward Voltage
Min.
-
Typ.
820
Max.
1300
Unit
mV
Conditions
VGS=0V, IS=200mA
www.taitroncomponents.com
Rev. A/CW
Page 2 of 8


Features Enhancement Mode MOSFET (Double N-Channe l) 2N7002KDWS Enhancement Mode MOSFET (Double N-Channel) Features  Advance d Trench Process Technology  High de nsity cell design for low RDS(ON)  V ery low leakage current in off conditio n  ESD Protected 2000V HBM  RoHS Compliance SOT-363 Mechanical Data C ase: Terminals: Weight: SOT-363, Plast ic Package Solderable per MIL-STD-750, Method 2026 0.006 gram Maximum Ratings (T Ambient=25ºC unless noted otherwis e) Symbol Description 2N7002KDWS VD SS VGSS ID IDP PD TJ TSTG ESD Drain-So urce Voltage Gate-Source Voltage Drain Current Continuous Drain Current Pulsed Drain Power Dissipation Junction Tempe rature Storage Temperature Range Gate-S ource ESD Rating TA=25°C TA=75°C 60 ±20 115 800 200 120 +150 -55 to +150 2000 Unit V V mA mA mW mW °C °C V T AITRON COMPONENTS INCORPORATED www.tait roncomponents.com Tel: (800)-TAITRON (8 00)-824-8766 (661)-257-6060 Fax: (800)- TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/CW Page 1 of 8 Enhancement Mode .
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