MPSA56 Transistors Datasheet

MPSA56 Datasheet, PDF, Equivalent


Part Number

MPSA56

Description

Small Signal General Purpose Transistors

Manufacture

TAITRON

Total Page 4 Pages
Datasheet
Download MPSA56 Datasheet


MPSA56
Small Signal General
Purpose Transistors (PNP)
MPSA55/MPSA56
Small Signal General Purpose Transistors (PNP)
Features
PNP Silicon Epitaxial Transistor for Switching and
Amplifier Applications
RoHS Compliance
Mechanical Data
Case:
Terminals:
Weight:
TO-92, Plastic Package
Solderable per MIL-STD-202G, Method 208
0.18 gram
TO-92
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
MPSA55
MPSA56
Unit
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
60 80
60 80
4.0
500
V
V
V
mA
Power Dissipation at TA=25°C
PD
Derate above 25°C
625 mW
5.0 mW/° C
Power Dissipation at TC=25°C
PD
Derate above 25°C
1.5
12
RθJA
Thermal Resistance Junction to Ambient Air
(Note)
200
RθJC
Thermal Resistance Junction to Case
83.3
TJ ,TSTG
Operation and Storage Junction Temperature
Range
-55 to +150
Note: RθJA is measured with the device soldered into a typical printed circuit board.
W
mW/° C
° C/W
° C/W
°C
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Rev. A/AH
Page 1 of 4

MPSA56
Small Signal General Purpose Transistors (PNP)
MPSA55/MPSA56
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
Description
V(BR)CEO* Collector-Emitter Breakdown Voltage
MPSA55
Min. Max.
60 -
MPSA56
Min. Max.
80 -
V(BR)EBO Emitter-Base Breakdown Voltage
4.0 - 4.0 -
ICBO
ICEO
Collector Cut–Off Current
Collector Cut–Off Current
- 0.1
VCB=60V,
IE=0
- 0.1
- 0.1
VCB=80V,
IE=0
- 0.1
VCE(sat) Collector Emitter Saturation Voltage
- 0.25 - 0.25
VBE(on) Base Emitter On Voltage
- 1.2 - 1.2
hFE D.C. Current Gain
100 - 100 -
100 - 100 -
fT** Current Gain-Bandwidth Product
50 - 50
*Pulse Test: Pulse Width<300µs, Duty Cycle<2%.
**fT is defined as the frequency at which IhfeI extrapolates to unity.
-
Unit
V
V
μA
μA
V
V
MHz
Conditions
IC=1mA, IB=0
IE=100µA, IC=0
VCE=60V, IB=0
IC=100mA, IB=10mA
IC=100mA, VCE=1V
VCE=1V, IC=10mA
VCE=1V, IC=100mA
VCE=1V, IC=100mA,
f=100MHz
www.taitroncomponents.com
Rev. A/AH
Page 2 of 4


Features Small Signal General Purpose Transistors (PNP) MPSA55/MPSA56 Small Signal Gene ral Purpose Transistors (PNP) Features • PNP Silicon Epitaxial Transistor fo r Switching and Amplifier Applications • RoHS Compliance Mechanical Data C ase: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, M ethod 208 0.18 gram TO-92 Maximum Rat ings (T Ambient=25ºC unless noted othe rwise) Symbol Description MPSA55 MP SA56 Unit VCEO VCBO VEBO IC Collecto r-Emitter Voltage Collector-Base Voltag e Emitter-Base Voltage Collector Curren t Continuous 60 80 60 80 4.0 500 V V V mA Power Dissipation at TA=25°C PD Derate above 25°C 625 mW 5.0 mW/° C Power Dissipation at TC=25°C PD Derat e above 25°C 1.5 12 RθJA Thermal R esistance Junction to Ambient Air (Note ) 200 RθJC Thermal Resistance Junct ion to Case 83.3 TJ ,TSTG Operation and Storage Junction Temperature Range -55 to +150 Note: RθJA is measured w ith the device soldered into a typical printed circuit board. W mW/° C ° C/.
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