BTN1053I3 Transistor Datasheet

BTN1053I3 Datasheet, PDF, Equivalent


Part Number

BTN1053I3

Description

NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 7 Pages
Datasheet
Download BTN1053I3 Datasheet


BTN1053I3
CYStech Electronics Corp.
Spec. No. : C818I3
Issued Date : 2010.01.26
Revised Date : 2014.02.26
Page No. : 1/7
NPN Epitaxial Planar Transistor
BTN1053I3
BVCEO
IC
RCESAT(MAX)
80V
2.5A
150mΩ
Features
Excellent HFE Characteristics up to 1A
Low Saturation Voltage, VCE(sat)=0.11V(typ)@IC=1A, IB=50mA
5A peak pulse current
Pb-free lead plating and halogen-free package
Symbol
BTN1053I3
Outline
TO-251
BBase
CCollector
EEmitter
BB CC E
Ordering Information
Device
BTN1053I3-0-UA-G
Package
TO-251
(Pb-free lead plating and halogen-free package)
Shipping
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec,UA : 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
BTN1053I3
CYStek Product Specification

BTN1053I3
CYStech Electronics Corp.
Spec. No. : C818I3
Issued Date : 2010.01.26
Revised Date : 2014.02.26
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed) (Note 1)
Power Dissipation @TA=25
Power Dissipation @TC=25
Operating Junction Temperature and Storage Range
Note 1: Single pulse, Pw300μs, Duty Cycle2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
Tj ; Tstg
Limits
150
80
6
2.5
5
1.5
10
-55~+150
Unit
V
V
V
A
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
12.5
83.3
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCES
BVCEO
BVEBO
ICBO
ICES
IEBO
VCE(sat) 1 *
VCE(sat) 2 *
VCE(sat) 3 *
VCE(sat) 4 *
VCE(sat) 5 *
VBE(sat) *
VBE(on) *
hFE 1 *
hFE 2 *
hFE 3 *
hFE 4 *
fT
Cob
Min.
150
150
80
6
-
-
-
-
-
-
-
-
-
-
300
300
120
30
-
-
Typ.
250
250
110
7.4
-
-
-
28
80
270
110
210
0.9
0.9
570
550
300
100
140
23
Max.
-
-
-
100
100
100
40
150
400
250
300
1.2
1.2
-
820
-
-
-
-
Unit
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
-
-
-
-
MHz
pF
Test Conditions
IC=100μA
IC=100μA
IC=10mA
IE=100μA
VCB=150V
VCE=150V
VEB=5V
IC=200mA, IB=20mA
IC=500mA, IB=20mA
IC=1A, IB=10mA
IC=1A, IB=50mA
IC=2A, IB=100mA
IC=1A, IB=50mA
VCE=2V, IC=3A
VCE=2V, IC=10mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=2V, IC=2A
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 300μs, Duty Cycle2%
BTN1053I3
CYStek Product Specification


Features CYStech Electronics Corp. Spec. No. : C 818I3 Issued Date : 2010.01.26 Revised Date : 2014.02.26 Page No. : 1/7 NPN E pitaxial Planar Transistor BTN1053I3 B VCEO IC RCESAT(MAX) 80V 2.5A 150mΩ F eatures • Excellent HFE Characteristi cs up to 1A • Low Saturation Voltage, VCE(sat)=0.11V(typ)@IC=1A, IB=50mA • 5A peak pulse current • Pb-free lead plating and halogen-free package Symb ol BTN1053I3 Outline TO-251 B:Base C:Collector E:Emitter BB CC E Ord ering Information Device BTN1053I3-0-U A-G Package TO-251 (Pb-free lead plati ng and halogen-free package) Shipping 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant p roducts, G for RoHS compliant and green compound products Packing spec,UA : 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name BTN1053I3 CYStek Product Specificati on CYStech Electronics Corp. Spec. No . : C818I3 Issued Date : 2010.01.26 Rev ised Date : 2014.02.26 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Para.
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