BTN13003T3 Transistor Datasheet

BTN13003T3 Datasheet, PDF, Equivalent


Part Number

BTN13003T3

Description

General Purpose NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 7 Pages
Datasheet
Download BTN13003T3 Datasheet


BTN13003T3
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTN13003T3
Spec. No. : C827T3
Issued Date : 2012.04.09
Revised Date : 2019.08.28
Page No. : 1/7
Features
High breakdown voltage, VCEO=450V (min.)
High collector current, IC(max)=1.5A (DC)
Pb-free lead plating package
Symbol
BTN13003T3
Outline
TO-126
BBase
CCollector
EEmitter
BCE
Ordering Information
Device
BTN13003T3-0-BL-X
Package
TO-126
(Pb-free lead plating package)
Shipping
200 pcs / bag, 3,000 pcs/box
30,000 pcs/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, BL: bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTN13003T3
CYStek Product Specification

BTN13003T3
CYStech Electronics Corp.
Spec. No. : C827T3
Issued Date : 2012.04.09
Revised Date : 2019.08.28
Page No. : 2/7
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)
Base Current
Power Dissipation(TA=25)
Power Dissipation(TC=25)
Junction Temperature
Storage Temperature
Note : Single pulse, Pw300μs, Duty Cycle2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Pd
Tj
Tstg
Limits
700
450
9
1.5
3 (Note )
0.2
1.5
20
150
-55~+150
Unit
V
V
V
A
A
A
W
W
C
C
Characteristics (Ta=25C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(SAT)
*VCE(SAT)
*VCE(SAT)
*VBE(SAT)
*VBE(SAT)
*hFE 1
*hFE 2
fT
tstg
tf
Min.
700
450
9
-
-
-
-
-
-
-
-
18
5
5
-
1.8
Typ.
-
-
-
-
-
-
136
256
400
0.84
0.92
-
-
-
-
-
Max.
-
-
-
1
50
100
300
600
800
1
1.2
36
21
-
0.5
6.6
Unit
V
V
V
μA
μA
nA
mV
mV
mV
V
V
-
-
MHz
μs
Test Conditions
IC=100μA
IC=10mA
IE=100μA
VCB=700V, IE=0
VCE=400V, IE=0
VEB=9V, IC=0
IC=500mA, IB=100mA
IC=1A, IB=250mA
IC=1.5A, IB=500mA
IC=500mA, IB=100mA
IC=1A, IB=250mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=10V, IC=100mA, f=100MHz
VCC=100V, IC=1A, IB1=-IB2=0.2A,
IC=0.25A
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
BTN13003T3
CYStek Product Specification


Features CYStech Electronics Corp. General Purpos e NPN Epitaxial Planar Transistor BTN13 003T3 Spec. No. : C827T3 Issued Date : 2012.04.09 Revised Date : 2019.08.28 P age No. : 1/7 Features  High breakd own voltage, VCEO=450V (min.)  High collector current, IC(max)=1.5A (DC) Pb-free lead plating package Symbol B TN13003T3 Outline TO-126 B:Base C Collector E:Emitter BCE Ordering Information Device BTN13003T3-0-BL-X P ackage TO-126 (Pb-free lead plating pac kage) Shipping 200 pcs / bag, 3,000 pc s/box 30,000 pcs/carton Environment fr iendly grade : S for RoHS compliant pro ducts, G for RoHS compliant and green c ompound products Packing spec, BL: bulk , 200 pcs/bag, 15 bags/box, 10 boxes/ca rton Product rank, zero for no rank pro ducts Product name BTN13003T3 CYStek Product Specification CYStech Electron ics Corp. Spec. No. : C827T3 Issued Da te : 2012.04.09 Revised Date : 2019.08. 28 Page No. : 2/7 Absolute Maximum Rat ings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage E.
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