BTN5551K3 Transistor Datasheet

BTN5551K3 Datasheet, PDF, Equivalent


Part Number

BTN5551K3

Description

General Purpose NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 6 Pages
Datasheet
Download BTN5551K3 Datasheet


BTN5551K3
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTN5551K3
Spec. No. : C208K3
Issued Date : 2012.06.28
Revised Date : 2012.10.02
Page No. : 1/6
Features
High breakdown voltage, BVCEO160V
Pb-free lead plating package
Symbol
BTN5551K3
Outline
TO-92L
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Note : Pulse test, pulse width300μs, duty cycle2%
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
RθJA
Tj ; Tstg
Limits
180
160
6
600
2 (Note)
200
900
139
-55~+150
Unit
V
V
V
mA
A
mA
mW
°C/W
°C
BTN5551K3
CYStek Product Specification

BTN5551K3
CYStech Electronics Corp.
Spec. No. : C208K3
Issued Date : 2012.06.28
Revised Date : 2012.10.02
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
fT
Cob
Min.
180
160
6
-
-
-
-
-
-
100
100
50
120
100
-
Typ.
-
-
-
-
-
0.1
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
0.15
0.2
1
1
-
-
-
270
-
6
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
-
MHz
pF
Test Conditions
IC=100μA
IC=1mA
IE=10μA
VCB=120V
VEB=6V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=6V, IC=2mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 300μs, Duty Cycle2%
Ordering Information
Device
BTN5551K3-0-BK-G
BTN5551K3-0-TB-G
Package
TO-92L
(Pb-free lead plating and halogen-free package)
TO-92L
(Pb-free lead plating and halogen-free package)
Shipping
500 pcs / bag, 10 bags/box,
10 boxes/carton
2000 pcs / Tape & Box
BTN5551K3
CYStek Product Specification


Features CYStech Electronics Corp. General Purpos e NPN Epitaxial Planar Transistor BTN55 51K3 Spec. No. : C208K3 Issued Date : 2012.06.28 Revised Date : 2012.10.02 Pa ge No. : 1/6 Features • High breakdo wn voltage, BVCEO≥ 160V • Pb-free l ead plating package Symbol BTN5551K3 O utline TO-92L B:Base C:Collector E:Emitter Absolute Maximum Ratings ( Ta=25°C) Parameter Collector-Base Volt age Collector-Emitter Voltage Emitter-B ase Voltage Collector Current (DC) Coll ector Current (pulse) Base Current Powe r Dissipation Thermal Resistance, Junct ion to Ambient Operating Junction and S torage Temperature Range Note : Pulse t est, pulse width≤300μs, duty cycle 2% Symbol VCBO VCEO VEBO IC ICP IB PD RθJA Tj ; Tstg Limits 180 160 6 600 2 (Note) 200 900 139 -55~+150 Unit V V V mA A mA mW °C/W °C BTN5551K3 CYS tek Product Specification CYStech Elec tronics Corp. Spec. No. : C208K3 Issue d Date : 2012.06.28 Revised Date : 2012 .10.02 Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO.
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