BTN6718T3 Transistor Datasheet

BTN6718T3 Datasheet, PDF, Equivalent


Part Number

BTN6718T3

Description

General Purpose NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 6 Pages
Datasheet
Download BTN6718T3 Datasheet


BTN6718T3
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTN6718T3
Spec. No. : C319T3
Issued Date : 2016.12.23
Revised Date : 2017.05.12
Page No. : 1/6
Features
High breakdown voltage, BVCEO100V
Large continuous collector current capability, IC(MAX)=1A(DC)
Low collector saturation voltage
Pb-free lead plating package
Symbol
BTN6718T3
Outline
TO-126
BBase
CCollector
EEmitter
E CB
Ordering Information
Device
BTN6718T3-0-BL-X
Package
TO-126
(Pb-free lead plating package)
Shipping
200 pcs / bag, 15 bags/box
BTN6718T3
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, BL : 200 pcs/bag, 15 bags/box
Product rank, zero for no rank products
Product name
CYStek Product Specification

BTN6718T3
CYStech Electronics Corp.
Spec. No. : C319T3
Issued Date : 2016.12.23
Revised Date : 2017.05.12
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)
Base Current
Power Dissipation(TA=25)
Power Dissipation(TC=25)
Junction Temperature
Storage Temperature
Note : Single pulse, Pw300μs, Duty Cycle2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Pd
Tj
Tstg
Limits
180
100
5
1
2 (Note )
0.2
1.6
10
150
-55~+150
Unit
V
V
V
A
A
A
W
W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(SAT)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
180
100
5
-
-
-
90
100
20
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
200
-
300
-
-
20
Unit
V
V
V
nA
nA
mV
-
-
-
MHz
pF
Test Conditions
IC=100μA
IC=1mA
IE=10μA
VCB=180V, IE=0
VEB=5V, IC=0
IC=350mA, IB=35mA
VCE=1V, IC=50mA
VCE=1V, IC=250mA
VCE=1V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
BTN6718T3
CYStek Product Specification


Features CYStech Electronics Corp. General Purpos e NPN Epitaxial Planar Transistor BTN67 18T3 Spec. No. : C319T3 Issued Date : 2016.12.23 Revised Date : 2017.05.12 Pa ge No. : 1/6 Features • High breakdo wn voltage, BVCEO≥ 100V • Large con tinuous collector current capability, I C(MAX)=1A(DC) • Low collector saturat ion voltage • Pb-free lead plating pa ckage Symbol BTN6718T3 Outline TO-12 6 B:Base C:Collector E:Emitter E CB Ordering Information Device BTN67 18T3-0-BL-X Package TO-126 (Pb-free le ad plating package) Shipping 200 pcs / bag, 15 bags/box BTN6718T3 Environme nt friendly grade : S for RoHS complian t products, G for RoHS compliant and gr een compound products Packing spec, BL : 200 pcs/bag, 15 bags/box Product rank , zero for no rank products Product nam e CYStek Product Specification CYStech Electronics Corp. Spec. No. : C319T3 Issued Date : 2016.12.23 Revised Date : 2017.05.12 Page No. : 2/6 Absolute Ma ximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Volt.
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